Extreme ultraviolet lithography (EUVL) has been demonstrated to meet the industrial
requirements of new-generation semiconductor fabrication. The development of high-power …

Extreme ultraviolet (EUV) lithography is currently entering high-volume manufacturing to
enable the continued miniaturization of semiconductor devices. The required EUV light, at …

The primary requirement for the development of tools for extreme ultraviolet lithography
(EUVL) has been the identification and optimization of suitable sources. These sources must …

A universal power-law scaling z¯∝ E 0.4 in the correlation between the average ion charge
state z¯ and kinetic energy E in expanding laser-driven tin plasmas is identified. Universality …

Optimal laser irradiation conditions for water-window (WW) x-ray emission (2.3–4.4 nm) from
an Au plasma are investigated to develop a laboratory-scale WW x-ray source. A minimum …

Lithography tools are being built and shipped to semiconductor manufacturers for high
volume manufacturing using extreme ultraviolet lithography (EUVL) at a wavelength of 13.5 …

We present the experimental investigations of extreme ultraviolet (EUV) radiation of laser-
produced plasma based on the micro-structured Gd target and obtain a strong EUV radiation …

The unresolved transition arrays (UTAs) emitted from laser produced bismuth (Bi) plasma
sources show potential for single-shot live cell imaging. We have measured extreme …

A flat-field grazing incidence spectrometer operating on the spectral region from 1 to 10 nm
was built for research on physics of high temperature and high energy density plasmas. It …

Abstract SiC/Fe 2 O 3/Fe 3 O 4/Fe embellished graphite layers (SiC/Fe x O y EGL) have
attracted the interest of many scholars due to their excellent absorbing properties. Here, for …