III-Nitride nanowire optoelectronics
Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …
intensively studied in the past decade. Unique to this material system is that its energy …
AlGaN nanowires for ultraviolet light-emitting: recent progress, challenges, and prospects
In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN)
nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such …
nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such …
Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources
Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep
ultraviolet (DUV) applications, the performance of conventional Al (Ga) N planar devices …
ultraviolet (DUV) applications, the performance of conventional Al (Ga) N planar devices …
On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures
Free hole concentrations up to∼ 6× 10 17 cm− 3 were measured in Mg-doped AlN
nanowires at room-temperature, which is several orders of magnitude larger than that of …
nanowires at room-temperature, which is several orders of magnitude larger than that of …
Surface emitting, high efficiency near-vacuum ultraviolet light source with aluminum nitride nanowires monolithically grown on silicon
To date, it has remained challenging to realize electrically injected light sources in the
vacuum ultraviolet wavelength range (∼ 200 nm or shorter), which are important for a broad …
vacuum ultraviolet wavelength range (∼ 200 nm or shorter), which are important for a broad …
An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band
We have investigated the molecular beam epitaxial growth and characterization of nearly
defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting …
defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting …
Recent progress of electrically pumped AlGaN diode lasers in the UV-B and-C bands
The development of electrically pumped semiconductor diode lasers emitting at the
ultraviolet (UV)-B and-C spectral bands has been an active area of research over the past …
ultraviolet (UV)-B and-C spectral bands has been an active area of research over the past …
Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates
Currently the AlGaN-based ultraviolet (UV) solid-state lighting research suffers from
numerous challenges. In particular, low internal quantum efficiency, low extraction efficiency …
numerous challenges. In particular, low internal quantum efficiency, low extraction efficiency …
Improving the efficiency of transverse magnetic polarized emission from AlGaN based LEDs by using nanowire photonic crystal
AlGaN-based deep ultraviolet (UV) light-emitting diodes (LEDs) are attractive for a wide
range of applications. To date, however, the best reported external quantum efficiency (EQE) …
range of applications. To date, however, the best reported external quantum efficiency (EQE) …
Controlling defect formation of nanoscale AlN: toward efficient current conduction of ultrawide‐bandgap semiconductors
Ultrawide‐bandgap semiconductors such as AlN, BN, and diamond hold tremendous
promise for high‐efficiency deep‐ultraviolet optoelectronics and high‐power/frequency …
promise for high‐efficiency deep‐ultraviolet optoelectronics and high‐power/frequency …