Semiconductor structure and forming method thereof
W Wei, BO Su, HY Cun - US Patent 11,276,608, 2022 - Google Patents
(57) ABSTRACT A semiconductor structure and a forming method thereof are provided. The
forming method includes: providing a base, where a mask material layer is formed on the …
forming method includes: providing a base, where a mask material layer is formed on the …
Subtractive patterning of interconnect structures
D Metzler, S Ghosh, JC Arnold, EA De Silva - US Patent 12,020,949, 2024 - Google Patents
A method of making a back-end-of-line (BEOL) component includes filling spaces in a layer
of metal material and a layer of hardmask material with a layer of scaffolding material. The …
of metal material and a layer of hardmask material with a layer of scaffolding material. The …
Integrated circuit device having parallel conductive lines with bulging end portion (s) and method of manufacturing the same
LEE Euibok, W Kim - US Patent 12,021,027, 2024 - Google Patents
An integrated circuit (IC) device includes a first conductive line in a closed curve defining a
local area on a substrate. The first conductive line has a first end portion and a second end …
local area on a substrate. The first conductive line has a first end portion and a second end …