The FinFET architecture has attracted growing attention over the last two decades since its
invention, owing to the good control of the gate electrode over the conductive channel …

This work presents, performance evaluation of linearity and intermodulation distortion of
novel nanoscale Gallium Nitride (GaN) Silicon-on-Insulator (SOI) N-channel FinFET (n …

This paper optimizes the fin aspect ratio (AR) of Junctionless Accumulation Mode Gate Stack
Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded …

The major motivation behind transistor scaling is the requirement for high‐speed transistors
with lower fabrication costs. When the fin thickness or breadth is smaller than 10 nm in a …

We report a comparative analysis of the performance of negative capacitance field-effect
transistors (NCFETs) with single gate, double gate, tri-gate (FinFET) and gate-all-around …

The efficiency of the integrated circuit (IC) as the reliability, speed, high production costs,
and power consumption will be reduced by the nanometric size of the MOSFET transistor …

Increasing dependencies on smart portable devices and requirement of longer battery back
needs low power high speed, more reliable transistors for digital and memory applications …

This paper analyses the electrical characteristics of 10 nm tri-gate (TG) N-and P-channel
silicon-on-insulator (SOI) FinFETs with hafnium oxide gate dielectric. The analysis has been …

The miniaturization has become a key word for advanced integrated circuits over the last few
years. It is within this context that the fin field effect transistor (FinFET) has appeared as a …

Quantum effects play a dominant role in nanometric structures for which we need to use new
methods to describe this phenomenon in device characterizations. In this paper an …