In recent years, a novel epitaxial method based on Quasi-van der Waals (QvdW) force to
epitaxy three-dimensional (3D) nitride semiconductors on two-dimensional (2D) materials …

TiO2/Cu2O/CuO multi-nanolayers highly sensitive toward volatile organic compounds
(VOCs) and H2 have been grown in various thicknesses by a cost-effective and reproducible …

Heteroepitaxy can reduce the cost and widen the application range of semiconductor film
synthesis and device fabrication. However, the lattice and thermal expansion coefficient …

Controlling the polarity of polar semiconductors on nonpolar substrates offers a wealth of
device concepts in the form of heteropolar junctions. A key to realize such structures is an …

Polarity-controlled ZnO films with an MgO buffer layer were grown on c-plane sapphire by
plasma-assisted molecular-beam epitaxy. Convergent beam electron diffraction results …

Lateral epitaxial overgrowth (LEO) of ZnO has been demonstrated in water at 90° C. The
process starts with hydrothermal epitaxial growth of ZnO (0001) on MgAl2O4 (111), followed …

High-electron-mobility ZnO epilayers are grown on c-plane sapphire with ZnO/MgO double-
buffer layers by plasma-assisted molecular beam epitaxy. Reflection high-energy electron …

The epitaxial relationships of lattices and crystalline qualities of LSMO/ZnO/sapphire double-
hetero systems were thoroughly analyzed using X-ray diffraction techniques with a modern …

The accurate absolute surface energies of (0001)/(000 1⁠) surfaces of wurtzite structures
are crucial in determining the thin film growth mode of important energy materials. However …

Graphene, a two-dimensional material with outstanding electrical and mechanical
properties, has attracted considerable attention in the field of semiconductor technologies …