Spin dynamics in semiconductors

MW Wu, JH Jiang, MQ Weng - Physics Reports, 2010 - Elsevier
This article reviews the current status of spin dynamics in semiconductors which has
achieved much progress in the recent years due to the fast growing field of semiconductor …

Semiconductor spin noise spectroscopy: Fundamentals, accomplishments, and challenges

GM Müller, M Oestreich, M Römer, J Hübner - Physica E: Low-dimensional …, 2010 - Elsevier
Semiconductor spin noise spectroscopy (SNS) has emerged as a unique experimental tool
that utilizes spin fluctuations to provide profound insight into undisturbed spin dynamics in …

Theory of the spin relaxation of conduction electrons in silicon

JL Cheng, MW Wu, J Fabian - Physical Review Letters, 2010 - APS
A realistic pseudopotential model is introduced to investigate the phonon-induced spin
relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of …

Electron spin relaxation due to D'yakonov-Perel' and Elliot-Yafet mechanisms in monolayer : Role of intravalley and intervalley processes

L Wang, MW Wu - Physical Review B, 2014 - APS
We investigate the electron spin relaxation due to the D'yakonov-Perel'and Elliot-Yafet
mechanisms, including the intra-and intervalley processes in monolayer MoS 2 in the …

Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

KR Jeon, BC Min, YH Jo, HS Lee, IJ Shin, CY Park… - Physical Review B …, 2011 - APS
We report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-
Ge contact at room temperature (RT), employing three-terminal Hanle measurements. A …

Valley depolarization in monolayer WSe2

T Yan, X Qiao, P Tan, X Zhang - Scientific reports, 2015 - nature.com
We have systematically examined the circular polarization of monolayer WSe2 at different
temperature, excitation energy and exciton density. The valley depolarization in WSe2 is …

Electron-spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition

M Römer, H Bernien, G Müller, D Schuh, J Hübner… - Physical Review B …, 2010 - APS
We have measured the electron-spin-relaxation rate and the integrated spin noise power in
n-doped GaAs for temperatures between 4 and 80 K and for doping concentrations ranging …

Electric control of the spin Hall effect by intervalley transitions

N Okamoto, H Kurebayashi, T Trypiniotis, I Farrer… - Nature materials, 2014 - nature.com
Controlling spin-related material properties by electronic means is a key step towards future
spintronic technologies. The spin Hall effect (SHE) has become increasingly important for …

Spin injection and helicity control of surface spin photocurrent in a three dimensional topological insulator

YQ Huang, YX Song, SM Wang, IA Buyanova… - Nature …, 2017 - nature.com
Abstract A three-dimensional (3D) topological insulator (TI) is a unique quantum phase of
matter with exotic physical properties and promising spintronic applications. However …

Temperature dependence of electron spin relaxation in bulk GaN

JH Buß, J Rudolph, F Natali, F Semond… - Physical Review B …, 2010 - APS
The electron spin dynamics in n-type wurtzite GaN is studied by time-resolved Kerr rotation
for temperatures from 80 to 295 K and magnetic fields up to 1 T. The temperature and …