Carrier dynamics in AlGaN-based single quantum well (QW) structures grown on sapphire
are studied by means of time-integrated and time-resolved photoluminescence …

We investigate carrier localization in Al-rich AlGaN/AlN quantum well (QW) structures. Low
temperature time-resolved photoluminescence (PL) experiments reveal a strong variation of …

Dynamics of radiative and nonradiative recombination of non-equilibrium carriers is
investigated in thick AlGaN epitaxial layers with Al content ranging from 0.11 to 0.71. The …

The carrier dynamics of Al‐rich AlGaN/AlN quantum well (QW) structures in the presence of
strong carrier localization is reported. Excitation density‐dependent photoluminescence (PL) …

The carrier dynamics in AlGaN epilayers with different degrees of carrier localization were
studied using low-temperature photoluminescence spectroscopy at different excitations. We …

Carrier dynamics in high-Al-content AlGaN epilayers with different dislocation densities from
5× 10^ 8 cm^− 2 to 5× 10^ 9 cm^− 2 is studied by comparing the photoluminescence decay …

III-nitrides are arguably already a classic semiconductor material group. The period of
intensive research of III-nitride semiconductors started by Nobel Prize winners Shuji …

The specific features of the cathodoluminescence (CL) spectra in AlInGaN heterostructures,
caused by the influence of phase separation and internal electric fields, observed at varied …

Исследованы особенности спектров катодолюминесценции в гетероструктурах
AlInGaN, вызванные влиянием фазового распада и внутренних электрических полей …

In this dissertation, I present the investigation of the carrier dynamics and frequency
dispersion in semiconductor materials for applications in light sensing and emitting devices …