High-resolution alpha spectrometry using 4H-SiC detectors: A review of the state-of-the-art
KC Mandal, SK Chaudhuri… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Silicon Carbide (SiC) semiconductor radiation detectors were first demonstrated in 1957,
however, meaningful progress was delayed until the mid-1990s when high-quality …
however, meaningful progress was delayed until the mid-1990s when high-quality …
Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μm epitaxial layers
Advances in the growth processes of 4H-SiC epitaxial layers have led to the continued
expansion of epilayer thickness, allowing for the detection of more penetrative radioactive …
expansion of epilayer thickness, allowing for the detection of more penetrative radioactive …
Advances in high-resolution radiation detection using 4H-SiC epitaxial layer devices
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for
harsh environment application have been studied extensively and reviewed in this article …
harsh environment application have been studied extensively and reviewed in this article …
High-resolution radiation detection using Ni/SiO2/n-4H-SiC vertical metal-oxide-semiconductor capacitor
In this article, we demonstrate the radiation detection performance of vertical metal-oxide-
semiconductor (MOS) capacitors fabricated on 20 μm thick n-4H-SiC epitaxial layers with the …
semiconductor (MOS) capacitors fabricated on 20 μm thick n-4H-SiC epitaxial layers with the …
Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z1/2 and EH6/7 deep defects
SK Chaudhuri, JW Kleppinger… - Journal of Applied Physics, 2020 - pubs.aip.org
Recent advances in the development of thick 4H-SiC epitaxial layers for the fabrication of
surface barrier radiation detectors have been paving the way for their use in highly …
surface barrier radiation detectors have been paving the way for their use in highly …
Radiation detection using n-type 4H-SiC epitaxial layer surface barrier detectors
SK Chaudhuri, KC Mandal - Advanced Materials for Radiation Detection, 2022 - Springer
While CdZnTe (CZT) is one of the best materials for room-temperature radiation detection,
they are not quite suitable for high-temperature or harsh-environment applications. This …
they are not quite suitable for high-temperature or harsh-environment applications. This …
Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n-4H-SiC MOS capacitors during positive bias temperature stress
The conduction mechanism (s) of gate leakage current JG through thermally grown silicon
dioxide (SiO 2) films on the silicon (Si) face of n-type 4H-silicon carbide (4H-SiC) has been …
dioxide (SiO 2) films on the silicon (Si) face of n-type 4H-silicon carbide (4H-SiC) has been …
Influence of carrier trapping on radiation detection properties in CVD grown 4H-SiC epitaxial layers with varying thickness up to 250 µm
Low doped n-type 4H-SiC epitaxial layers of thickness 50, 150, and 250 µm grown by hot
wall chemical vapor deposition were used to fabricate Ni/4H-SiC Schottky radiation …
wall chemical vapor deposition were used to fabricate Ni/4H-SiC Schottky radiation …
Enhancement of piezoelectricity in dimensionally engineered metal‐halide perovskites induced by deep level defects
Metal halide perovskite solar cells (PSCs) have been considered to be one of the most
promising next‐generation energy harvesters over the past decades due to remarkably …
promising next‐generation energy harvesters over the past decades due to remarkably …
High Resolution Metal-Oxide-4H-SiC Radiation Detectors: A Review
KC Mandal, SK Chaudhuri… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
This paper reviews the performance of vertical metal-oxide-semiconductor (MOS) radiation
detectors on n-type 4H-SiC epitaxial layers, comparing SiO 2, Y 2 O 3, and Ga 2 O 3 oxide …
detectors on n-type 4H-SiC epitaxial layers, comparing SiO 2, Y 2 O 3, and Ga 2 O 3 oxide …