Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
Structural and electronic properties of III-V bismuth compounds
We have performed ab initio self-consistent calculations based on the full potential linear
augmented plane-wave method with the generalized gradient approximation to investigate …
augmented plane-wave method with the generalized gradient approximation to investigate …
Lattice Dynamics and Optoelectronic Properties of Vacancy-Ordered Double Perovskite Cs2TeX6 (X = Cl–, Br–, I–) Single Crystals
The soft, dynamic lattice of inorganic lead halide perovskite CsPbX3 (X= Cl–, Br–, I–) leads
to the emergence of many interesting photophysical and optoelectronic phenomena …
to the emergence of many interesting photophysical and optoelectronic phenomena …
Characteristics of semiconductor alloy GaAs1-xBix
K Oe - Japanese Journal of Applied Physics, 2002 - iopscience.iop.org
The characteristics of GaAs 1-x Bi x semiconductor alloy layers grown by metalorganic vapor
phase epitaxy (MOVPE) have been studied. GaAs 1-x Bi x epilayers were obtained on GaAs …
phase epitaxy (MOVPE) have been studied. GaAs 1-x Bi x epilayers were obtained on GaAs …
Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy
We report the first observation of photoluminescence (PL) from the dilute bismide alloy
GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (100) …
GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (100) …
Dilute GaAs1− xBix epilayers with different bismuth concentrations grown by Molecular Beam Epitaxy: A promising candidate for gamma radiation sensor applications
Radiation interaction studies are very important for exploring the technological applications
of new materials in radiation environments. This work reports the effect of gamma radiation …
of new materials in radiation environments. This work reports the effect of gamma radiation …
Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy
Metalorganic vapour phase epitaxial growth of GaAsBi alloy has been carried out at
atmospheric pressure in horizontal geometry reactor. In order to achieve the growth of this …
atmospheric pressure in horizontal geometry reactor. In order to achieve the growth of this …
Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi
Abstract Herein we investigate a (001)-oriented GaAs1− x Bi x/GaAs structure possessing Bi
surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth …
surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth …
Bismuth quantum dots in annealed GaAsBi/AlAs quantum wells
R Butkutė, G Niaura, E Pozingytė, B Čechavičius… - Nanoscale research …, 2017 - Springer
Formation of bismuth nanocrystals in GaAsBi layers grown by molecular beam epitaxy at
330° C substrate temperature and post-growth annealed at 750° C is reported. Superlattices …
330° C substrate temperature and post-growth annealed at 750° C is reported. Superlattices …
[HTML][HTML] Raman scattering study of photoexcited plasma in GaAsBi/GaAs heterostructures: Influence of carrier confinement on photoluminescence
S Hasegawa, N Hasuike, K Kanegae… - Materials Science in …, 2023 - Elsevier
GaAsBi alloys are potential candidates for near-infrared optoelectronic applications, such as
light-emitting diodes, laser diodes, avalanche photodiodes, and solar cells. In this paper …
light-emitting diodes, laser diodes, avalanche photodiodes, and solar cells. In this paper …