Review of Ni‐Cu based front side metallization for c‐Si solar cells
MC Raval, CS Solanki - Journal of Solar Energy, 2013 - Wiley Online Library
Given the high percentage of metal cost in cell processing and concerns due to increasing
Ag prices, alternative metallization schemes are being considered. Ni‐Cu based front side …
Ag prices, alternative metallization schemes are being considered. Ni‐Cu based front side …
Analyzing impact of background plating from alkaline Ni bath for Ni-Cu metallization
MC Raval, A Joshi, CS Solanki - 2013 IEEE 39th Photovoltaic …, 2013 - ieeexplore.ieee.org
Ni-Cu based front contacts for c-Si cells are plated on patterned SiN x and there could be
undesirable background plating leading to shading and shunting losses. In this work …
undesirable background plating leading to shading and shunting losses. In this work …
Inductively Coupled Plasma Atomic Emission Spectroscopy: A bulk analysis and process monitoring technique for silicon solar cell fabrication
AP Joshi, MC Raval, A Kottantharayil… - 2013 IEEE 39th …, 2013 - ieeexplore.ieee.org
We report on the investigation of Inductively Coupled Plasma Atomic Emission Spectroscopy
(ICP AES), a trace element analysis technique, as a bulk impurity characterization and …
(ICP AES), a trace element analysis technique, as a bulk impurity characterization and …