A phenyl derivative of hexamethyldisilazane—bis (trimethylsilyl) phenylamine—was first
examined as a single-source precursor for SiCN film preparation by plasma enhanced …

An apparatus includes a first interconnect and a first barrier structure. The first barrier
structure is in contact with a dielectric material. The apparatus further includes a first …

The influence of the SiN cap-layer deposition process including different pre-clean
treatments on the electromigration (EM) and stressvoiding (SV) behavior of copper dual …

CVD-based carbon-doped silicon oxides were developed for low-k applications in AMD
Opteron and AMD Athlon 64 microprocessors. After resolving problems specific to low-k …

Lowering of the insulator dielectric constant to meet current and future microelectronic
device performance requirements has come at the expense of decreasing mechanical …

Heat resistant sensors equipped with any of a variety of transducers for measuring any of a
variety of properties of fluids are constructed with components comprising materials that can …

A cap layer for a copper interconnect structure formed in a first dielectric layer is provided. In
an embodiment, the cap layer may be formed by an in-situ deposition process in which a …

The interfacial adhesion energy was studied using the four-point bend method for boron
carbo-nitride (BCxNy) deposited on dielectric and copper films. Twenty-five nanometer …

With feature size of device scaled down 45 nm technological node and beyond, the backend
of the line (BEOL) faces too many problems such as resistance–capacitance (RC) delay …

This paper deals with the interfacial reliability between Cu interconnects and dielectric
materials which is a major obstacle to improving the manufacturing yield of memory devices …