Abstract Silicon nitride (Si3N4) was prepared from silicon by a sintered reaction‐bonded
silicon nitride method using yttria and magnesia as sintering additives. Post‐sintering (PS) of …

This review addressed the recent progress of sintered reaction‐bonded Si 3 N 4 (SRBSN)
ceramics which are expected to be used as ceramic substrates of the next-generation power …

Silicon nitride films have been deposited at a low temperature (70° C) by inductively coupled
plasma chemical vapor deposition (ICP-CVD) technique and their physical and chemical …

Plasma enhanced chemical vapor deposition (PECVD) a-SiCXNY: H thin films have been
studied as molecular sieve membranes for light (hydrogen, helium) gas separation at room …

Silicon carbonitride thin films have been deposited by plasma enhanced chemical vapor
deposition (PECVD) from bis (dimethylamino) dimethylsilane (BDMADMS) as a function of …

Thin silicon nitride films were prepared at 350° C by inductively coupled plasma chemical
vapor deposition on Si (100) substrates under different NH3/SiH4 or N2/SiH4 gas mixture …

Amorphous silicon carbonitride (a-SiCN) thin films were synthesized in a microwave plasma
assisted chemical vapor deposition system using N2, Ar, CH4 and hexamethyldisilazane …

This paper deals with the deposition of silicon nitride‐like films at low temperatures using
radio frequency inductively coupled plasmas fed with bis (dimethylamino) dimethylsilane …

In this study, the impact of deposition conditions on the properties of amorphous
hydrogenated silicon nitride (a-SiN x: H) films using an inductively coupled plasma …

The preparation of water-in-oil emulsions with silicon nitride microfluidic nozzle arrays
requires a surface, which is not wetted by the continuous water phase. Hence, we deposited …