Trap density simulations on CZTSSe solar cells with AMPS-1D

J Conde, I Zuñiga, H Vilchis… - Journal of Materials …, 2018 - Springer
This work involves the simulation of Cu2ZnSn (S, Se)(CZTSSe) solar cell in analysis of
microelectronic and photonic structures (AMPS-1D) while taking into account previous …

Colloidal thallium halide nanocrystals with reasonable luminescence, carrier mobility and diffusion length

WJ Mir, A Warankar, A Acharya, S Das, P Mandal… - Chemical …, 2017 - pubs.rsc.org
Colloidal lead halide based perovskite nanocrystals (NCs) have been recently established
as an interesting class of defect-tolerant NCs with potential for superior optoelectronic …

Performance assessment of oxygenated CdS films-based photodetector

İ Polat, S Yılmaz, T Küçükömeroğlu, M Tomakin… - Materials Today …, 2024 - Elsevier
CdS films were grown by thermal evaporation on glass substrates. After growth process,
samples were oxygenated at 400° C at various gas pressures for 5 mins employing rapid …

Performance dependence of self-aligned dual-gate poly-Si TFTs on localized defective regions

CC Hsu, JX Li, PT Chen, M Joodaki - … Science and Technology, 2020 - iopscience.iop.org
This study investigates effects of localized defect regions on electrical characteristics of self-
aligned dual-gate poly-Si thin-film transistors (TFTs). The thickness of the poly-Si channel …

[PDF][PDF] 비대칭DGMOSFET 의도핑분포함수에따른DIBL

정학기 - 한국정보통신학회논문지, 2015 - researchgate.net
요 약본 연구에서는 비대칭 이중게이트 MOSFET 의 채널 내 도핑농도분포에 대한
드레인유도장벽감소 (Drain Induced Barrier Lowering; DIBL) 에 대하여 분석하고자한다. DIBL …

[引用][C] Caracterización de uniones tipo NP obtenidas por epitaxia de haces moleculares (MBE) para su aplicación en dispositivos fotovoltaicos

A Ruiz Suarez - 2016 - Instituto de Ciencias Básicas y …

[引用][C] Drain Induced Barrier Lowering of Asymmetric Double Gate MOSFET for Channel Doping Profile

H Jung - Journal of the Korea Institute of …, 2015 - The Korea Institute of Information …