The GW approximation in electronic structure theory has become a widespread tool for
predicting electronic excitations in chemical compounds and materials. In the realm of …

Over the past decade we have developed Koopmans functionals, a computationally efficient
approach for predicting spectral properties with an orbital-density-dependent functional …

We present consistent sets of band parameters (including band gaps, crystal-field splittings,
effective masses, Luttinger and EP parameters) for AlN, GaN, InN and ZnO in the wurtzite …

ZnO is a prototypical semiconductor with occupied d 10 bands that interact with the anion p
states and is thus challenging for electronic structure theories. Within the context of these …

Lattice strain is a useful and economic way to tune the device performance and is commonly
present in nanostructures. Here, we investigated for the first time the exciton spectra …

We report angle-resolved photoemission spectroscopy (ARPES) on a GaAs thin film
protected by an amorphous As layer with thickness exceeding the typical probing depths of …

We present a detailed study of the dielectric response of ZnO using a combination of low-
loss momentum-resolved electron energy-loss spectroscopy (EELS) and first-principles …

The formation of hydrogen overlayers on the Zn-terminated ZnO (0001) surface has been
reexamined by angle-resolved photoemission spectroscopy (ARPES). While low-energy …

Band alignment at the interface between evaporated silver films and Zn-or O-terminated
polar orientations of ZnO is explored by combining soft and hard x-ray photoemissions on …

We have analysed the surface band bending (SBB) at the clean ZnO (0001)-Zn surface and
after its modification by electropositive, electronegative and atmospheric adsorbates. The …