Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

We review recent progress in the growth and characterization of Si 1− x Ge x islands and Ge
dots on (001) Si. We discuss the evolution of the island morphology with Si 1− x Ge x …

Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

A procedure for the quantitative measurement of composition and strain in epitaxial Si1-
xGex/Si heterostructures by means of Raman spectroscopy for any Ge concentration is …

The built-in strain and composition of as-grown and Si-capped single layers of Ge∕ Si dots
grown at various temperatures (460–800° C) are studied by a comparative analysis of the …

Ge under high strain is predicted to become a direct bandgap semiconductor. Very large
deformations can be introduced using microbridge devices. However, at the microscale …

A comprehensive study of the biaxial strain-induced shift of the Si 1− x Ge x Raman active
phonon modes is presented. High-resolution Raman measurements of Si 1− x Ge x/Si …

High-quality Ge epilayer on Si (100) substrate with an inserted low-temperature Ge seed
layer and a thin Si0. 77Ge0. 23 layer was grown by ultrahigh vacuum chemical vapor …

Due to their inherent physical properties, thin-film Si/SiGe heterostructures have specific
thermal management applications in advanced integrated circuits and this in turn is …

A 2.7% tensile strained Ge/SiGe heterostructure nanowire (NW) is in-situ fabricated by a
three-dimensional Ge condensation method. The NW metal-semiconductor-metal (MSM) …