Vertical PtOx/Pt/β-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage
We demonstrate Schottky barrier engineering using PtO x/thin Pt Schottky contacts
combined with edge termination using a high permittivity dielectric (ZrO 2) field-plate for high …
combined with edge termination using a high permittivity dielectric (ZrO 2) field-plate for high …
Ultra-low reverse leakage in large area kilo-volt class β-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF
We introduce vertical Schottky barrier diodes (SBDs) based on β-Ga 2 O 3 with trench
architecture, featuring a high-permittivity dielectric RESURF structure. These diodes are …
architecture, featuring a high-permittivity dielectric RESURF structure. These diodes are …
[HTML][HTML] Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes
NS Hendricks, AE Islam, EA Sowers… - Journal of Applied …, 2024 - pubs.aip.org
β-Ga 2 O 3 is of great interest for power electronic devices with efficiency beyond current
generation Si, 4H-SiC, and GaN devices due to its large breakdown electric field of∼ 8 …
generation Si, 4H-SiC, and GaN devices due to its large breakdown electric field of∼ 8 …
Low QCVF 20A/1.4kV β-Ga2O3 Vertical Trench High-k RESURF Schottky Barrier Diode with Turn-on Voltage of 0.5V
We present a-Ga2O3 Trench Schottky Barrier Diode (SBD) featuring a high-permittivity (high-
k) dielectric RESURF and an atomic layer-deposited (ALD) Ru anode contact to engineer …
k) dielectric RESURF and an atomic layer-deposited (ALD) Ru anode contact to engineer …
A Review of β-Ga2O3 Power Diodes
Y He, F Zhao, B Huang, T Zhang, H Zhu - Materials, 2024 - mdpi.com
As the most stable phase of gallium oxide, β-Ga2O3 can enable high-quality, large-size, low-
cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7 …
cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7 …
Single-Event Burnout in Vertical β-Ga2O3 Diodes with Pt/PtOx Schottky Contacts and High-k Field-Plate Dielectrics
Single-event burnout (SEB) is experimentally observed in structurally improved vertical Beta-
gallium oxide (-Ga2O3) Schottky barrier diodes (SBDs) with Pt/PtOx Schottky contacts and …
gallium oxide (-Ga2O3) Schottky barrier diodes (SBDs) with Pt/PtOx Schottky contacts and …
Experimental study of Ni/TiO2/β-Ga2O3 metal–dielectric–semiconductor diodes using p-NiO junction termination extension
This work demonstrates TiO 2/β-Ga 2 O 3 metal–dielectric–semiconductor (MDS) diodes
with an average breakdown field beyond the material limits of SiC and GaN. These MDS …
with an average breakdown field beyond the material limits of SiC and GaN. These MDS …
Low turn-on voltage and 2.3 kV β-Ga2O3 heterojunction barrier Schottky diodes with Mo anode
In this work, we propose combining a low work function anode metal and junction barrier
Schottky structure to simultaneously achieve low turn-on voltage (V on) and high breakdown …
Schottky structure to simultaneously achieve low turn-on voltage (V on) and high breakdown …
Enhanced UV–Vis Rejection Ratio in Metal/BaTiO3/β‐Ga2O3 Solar‐Blind Photodetectors
The fabrication and characterization of metal/BaTiO3/β‐Ga2O3 solar‐blind photodetectors
are reported. β‐Ga2O3 is a promising material for solar‐blind photodetectors due to its large …
are reported. β‐Ga2O3 is a promising material for solar‐blind photodetectors due to its large …
Analytical Determination of Majority Carrier Diode Losses in Power Switching and Perspective for Ultrawide Bandgap Semiconductors
NS Hendricks, JJ Piel, AE Islam… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Ultra wide bandgap (UWBG) materials have exciting potential for power electronic
applications due to their high breakdown electric fields. However, current UWBG diodes that …
applications due to their high breakdown electric fields. However, current UWBG diodes that …