Device physics underlying silicon heterojunction and passivating‐contact solar cells: A topical review

RVK Chavali, S De Wolf… - Progress in Photovoltaics …, 2018 - Wiley Online Library
The device physics of commercially dominant diffused‐junction silicon solar cells is well
understood, allowing sophisticated optimization of this class of devices. Recently, so‐called …

On the reliability of electrostatic NEMS/MEMS devices: Review of present knowledge on the dielectric charging and stiction failure mechanisms and novel …

U Zaghloul, G Papaioannou, B Bhushan… - Microelectronics …, 2011 - Elsevier
This paper reviews the state of the art knowledge related to critical failure mechanisms in
electrostatic micro-and nano-electromechanical systems (MEMS and NEMS) which are the …

Propensity and geometrical distribution of surface nanobubbles: effect of electrolyte, roughness, pH, and substrate bias

M Mazumder, B Bhushan - Soft Matter, 2011 - pubs.rsc.org
Nanobubbles are believed to have surface charges at the gas–liquid interface. However, the
effect of various factors on the formation mechanism and stability of these charged species is …

Stability of charge distributions in electret films on the nm-scale

S Gödrich, HW Schmidt… - ACS Applied Materials & …, 2022 - ACS Publications
Electret materials find use in various applications, such as microphones or filter media. In
recent years, electrets have been used also increasingly on the micrometer scale, for …

A study of field emission process in electrostatically actuated MEMS switches

L Michalas, A Garg, A Venkattraman… - Microelectronics …, 2012 - Elsevier
A study of field emission process in MEMS-based capacitor/switch-like geometries is
presented. High resolution current–voltage characteristics up to breakdown have been …

K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability

A Persano, A Tazzoli, P Farinelli, G Meneghesso… - Microelectronics …, 2012 - Elsevier
Shunt capacitive RF MEMS switches were developed on GaAs substrate, using a III–V
technology process that is fully compatible with standard MMIC fabrication. The switches …

Nanoscale characterization of different stiction mechanisms in electrostatically driven MEMS devices based on adhesion and friction measurements

U Zaghloul, B Bhushan, P Pons… - Journal of colloid and …, 2011 - Elsevier
In this work, for the first time different stiction mechanisms in electrostatic micro-
electromechanical systems (MEMS) switches were studied. In these devices stiction can be …

Dielectric charging induced drift in micro device reliability-a review

W Zhou, J He, X He, H Yu, B Peng - Microelectronics reliability, 2016 - Elsevier
The movement or migration of charges in dielectric materials like silicon oxide, silicon nitride
and glass, is recognized as one of the most significant causes of drift instability of MEMS …

A study of deposition conditions on charging properties of PECVD silicon nitride films for MEMS capacitive switches

M Koutsoureli, L Michalas, A Gantis… - Microelectronics …, 2014 - Elsevier
The present paper aims to provide a better insight to the electrical characteristics of silicon
nitride films that have been deposited with PECVD method under different conditions. The …

Kelvin probe force microscopy-based characterization techniques applied for electrostatic MEMS/NEMS devices and bare dielectric films to investigate the dielectric …

U Zaghloul, B Bhushan, F Coccetti, P Pons… - Journal of Vacuum …, 2011 - pubs.aip.org
In this study, two different characterization techniques based on Kelvin probe force
microscopy (KPFM) have been used to investigate the dielectric and substrate charging in …