Energy Level Engineering in In x Ga1–x As/GaAs Quantum Dots Applicable to Quantum Dot-Lasers by Changing the Stoichiometric Percentage
MA Borji, E Rajaei - Journal of Nanoelectronics and …, 2016 - ingentaconnect.com
Band edge and energy levels of truncated pyramidal In x Ga1–x As/GaAs (001) quantum
dots are studied by single-band effective mass approach, and the dependence to …
dots are studied by single-band effective mass approach, and the dependence to …
Influence of Indium-Percentage Variation on Dynamical Characteristics of InxGa1-xAs/GaAs(001) Quantum Dot Lasers
MA Borji, E Rajaei - Iranian Journal of Science and Technology …, 2018 - Springer
The influence of indium percentage on dynamical characteristics of In x Ga 1-x As/GaAs
(001) quantum dot lasers (QDLs) is investigated. Energy levels of self-organized truncated …
(001) quantum dot lasers (QDLs) is investigated. Energy levels of self-organized truncated …
Scrutiny of the dynamics of quantum dot semiconductor lasers
The present paper introduces a numerical simulation results of the study from semiconductor
quantum dot laser via the solution of four-equations model that describe temporal variations …
quantum dot laser via the solution of four-equations model that describe temporal variations …