Low-power electronic technologies for harsh radiation environments

J Prinzie, FM Simanjuntak, P Leroux… - Nature Electronics, 2021 - nature.com
Electronic technologies that can operate in harsh radiation environments are important in
space, nuclear and avionic applications. However, radiation-hardened (rad-hard) integrated …

A memristor-based Bayesian machine

KE Harabi, T Hirtzlin, C Turck, E Vianello, R Laurent… - Nature …, 2023 - nature.com
Memristors, and other emerging memory technologies, can be used to create energy-
efficient implementations of neural networks. However, for certain edge applications (in …

Forming‐free grain boundary engineered hafnium oxide resistive random access memory devices

S Petzold, A Zintler, R Eilhardt, E Piros… - Advanced Electronic …, 2019 - Wiley Online Library
A model device based on an epitaxial stack combination of titanium nitride (111) and
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …

Structural and electrical response of emerging memories exposed to heavy ion radiation

T Vogel, A Zintler, N Kaiser, N Guillaume, G Lefèvre… - ACS …, 2022 - ACS Publications
Hafnium oxide-and GeSbTe-based functional layers are promising candidates in material
systems for emerging memory technologies. They are also discussed as contenders for …

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

S Petzold, E Piros, R Eilhardt, A Zintler… - Advanced Electronic …, 2020 - Wiley Online Library
This work investigates the transition from digital to gradual or analog resistive switching in
yttrium oxide‐based resistive random‐access memory devices. It is shown that this transition …

Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Z Shen, Y Qi, IZ Mitrovic, C Zhao, S Hall, L Yang, T Luo… - Micromachines, 2019 - mdpi.com
Resistive random access memory (RRAM) devices with Ni/AlOx/Pt-structure were
manufactured by deposition of a solution-based aluminum oxide (AlOx) dielectric layer …

Atomic-scale structure of ZrO2: Formation of metastable polymorphs

AP Solomon, EC O'Quinn, J Liu, IM Gussev, X Guo… - Science …, 2025 - science.org
Metastable phases can exist within local minima in the potential energy landscape when
they are kinetically “trapped” by various processing routes, such as thermal treatment, grain …

[HTML][HTML] Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier

E Piros, S Petzold, A Zintler, N Kaiser, T Vogel… - Applied Physics …, 2020 - pubs.aip.org
This work addresses the thermal stability of bipolar resistive switching in yttrium oxide-based
resistive random access memory revealed through the temperature dependence of the DC …

Advances of embedded resistive random access memory in industrial manufacturing and its potential applications

Z Wang, Y Song, G Zhang, Q Luo, K Xu… - … Journal of Extreme …, 2024 - iopscience.iop.org
Embedded memory, which heavily relies on the manufacturing process, has been widely
adopted in various industrial applications. As the field of embedded memory continues to …

Multiple Switching Modes of NiOx Memristors for Memory-Driven Multifunctional Device Applications

YR Park, H Cho, G Wang - ACS Applied Electronic Materials, 2022 - ACS Publications
Multiple building components with a variety of switching capabilities are required to
implement memory-driven parallel computing architecture and multifunctional device …