2D materials and heterostructures for photocatalytic water-splitting: A theoretical perspective

G Wang, J Chang, W Tang, W Xie… - Journal of Physics D …, 2022 - iopscience.iop.org
Photocatalytic water-splitting for hydrogen generation by sunlight provides a new route to
address energy and environmental problems. In recent years, tremendous efforts have been …

First-principles insights into the spin-valley physics of strained transition metal dichalcogenides monolayers

PEF Junior, K Zollner, T Woźniak, M Kurpas… - New Journal of …, 2022 - iopscience.iop.org
Transition metal dichalcogenides (TMDCs) are ideal candidates to explore the manifestation
of spin-valley physics under external stimuli. In this study, we investigate the influence of …

Electronic Properties of Zn2V(1–x)NbxN3 Alloys to Model Novel Materials for Light-Emitting Diodes

AM Stratulat, C Tantardini, M Azizi… - The Journal of …, 2023 - ACS Publications
We propose the Zn2V (1–x) Nb x N3 alloy as a new promising material for optoelectronic
applications, in particular for light-emitting diodes (LEDs). We perform accurate electronic …

Ab initio investigation of structural stability and exfoliation energies in transition metal dichalcogenides based on Ti-, V-, and Mo-group elements

CMO Bastos, R Besse, JLF Da Silva, GM Sipahi - Physical Review Materials, 2019 - APS
In this work, we report an ab initio investigation based on density functional theory of the
structural, energetic, and electronic properties of 2D layered chalcogenides compounds …

Optical absorption exhibits pseudo-direct band gap of wurtzite gallium phosphide

BC da Silva, ODD Couto Jr, HT Obata, MM de Lima… - Scientific reports, 2020 - nature.com
Definitive evidence for the direct band gap predicted for Wurtzite Gallium Phosphide (WZ
GaP) nanowires has remained elusive due to the lack of strong band-to-band luminescence …

Negative thermal expansion coefficient of Al pnictides–A systematic realistic pressure-dependent lattice dynamical study

DN Talwar, HH Lin - Materials Science and Engineering: B, 2024 - Elsevier
In weakly and strongly bonded semiconductors, the knowledge of accurate linear thermal
expansion coefficients α T and Grüneisen constants γ T play crucial roles for attaining the …

Strain-mediated bandgap engineering of straight and bent semiconductor nanowires

B Lim, XY Cui, SP Ringer - Physical Chemistry Chemical Physics, 2021 - pubs.rsc.org
Accurate simulation of semiconductor nanowires (NWs) under strain is challenging,
especially for bent NWs. Here, we propose a simple yet efficient unit-cell model to simulate …

CO2 Photoreduction via Quantum Tunneling: Thin TiO2-Coated GaP with Coherent Interface To Achieve Electron Tunneling

LF Li, YF Li, ZP Liu - ACS Catalysis, 2019 - ACS Publications
Photocatalysts for CO2 photoreduction such as GaP often suffer from poor stability due to a
high reduction environment as required for CO2 reduction, eg,− 1.9 V vs SCE to reach the …

DFT estimation of structural parameters and band gaps of III–V (GaP, AlP, InP, BP) and II–VI (BeX, MgX, CdX: XO, S, Se, Te) semiconductors

S Arora, DS Ahlawat, D Singh - Pramana, 2023 - Springer
In density functional theory (DFT)-based computational methods, electronic properties at
optimised atomic position and lattice constants are calculated for semiconducting materials …

First-principles calculations of elastic and thermodynamic properties under hydrostatic pressure of cubic InNxP1-x ternary alloys

I Hattabi, A Abdiche, SH Naqib, R Khenata - Chinese Journal of Physics, 2019 - Elsevier
We present a first-principles study of the elastic and thermodynamic properties of the zinc-
blend (ZB) InN x P 1-x ternary alloy in the full range of 0≤ x≤ 1. Calculations were carried …