Bioactive Compound Synthetic Capacity and Ecological Significance of Marine Bacterial Genus Pseudoalteromonas

JP Bowman - Marine drugs, 2007 - mdpi.com
The genus Pseudoalteromonas is a marine group of bacteria belonging to the class
Gammaproteobacteria that has come to attention in the natural product and microbial …

Praseodymium-doped In-Sn-Zn-O TFTs with effective improvement of negative-bias illumination stress stability

H Zhang, L Liang, X Wang, Z Wu… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
In this work, amorphous praseodymium-doped In-Sn-Zn-O (ITZO-Pr) thin-film transistors
(TFTs) were fabricated with improved negative-bias illumination stress (NBIS) stability under …

Enhanced electrical properties of amorphous In-Sn-Zn oxides through heterostructuring with Bi2Se3 topological insulators

CC Wang, AY Lo, MC Cheng, YS Chang, HC Shih… - Scientific Reports, 2024 - nature.com
Amorphous indium tin zinc oxide (a-ITZO)/Bi2Se3 nanoplatelets (NPs) were fabricated using
a two-step procedure. First, Bi2Se3 NPs were synthesized through thermal chemical vapor …

Assistive technology in public policies: trends in the international debate and implications for Brazil

CA Domingues, ALF Laplane - Disability and Rehabilitation …, 2024 - Taylor & Francis
Purpose The objectives of this study were threefold: to identify the main topics related to the
international debate on Assistive Technology (AT) public policies, to analyze the Brazilian …

Investigation of electrical performance and operation stability of RF-sputtered InSnZnO thin film transistors by oxygen-ambient rapid thermal annealing

S Maeng, H Kim, G Choi, Y Choi, S Oh… - … Science and Technology, 2020 - iopscience.iop.org
We investigated the electrical properties and operational stability of amorphous indium-tin-
zinc-oxide (a-ITZO) thin-film transistors (TFTs). We fabricated the a-ITZO TFTs using …

Enhancement-mode thin film transistor using amorphous phosphorus-doped Indium–Zinc–Tin-Oxide channel layer

H Yang, W Yang, J Su, X Zhang - Materials Science in Semiconductor …, 2022 - Elsevier
In this research, we investigated optical properties of amorphous Phosphorus-doped Indium–
Zinc–Tin-Oxide (a-IZTO: P) thin films and their feasibility as the channel layer for thin film …

Effects of rapid thermal annealing on wide band gap tungsten oxide films

M Jiang, G Zhang, C Li, J Liu, K Guo, H Ning… - Superlattices and …, 2020 - Elsevier
The effects of rapid thermal annealing (RTA) on wide band gap tungsten oxide films were
studied. We used ammonium meta-tungstate and citric acid to prepare precursor solution …

Rapid thermal annealing treatment on WO3 thin films for energy efficient smart windows

KS Usha, SY Lee - Ceramics International, 2024 - Elsevier
Electrochromic devices (ECDs) based on tungsten trioxide (WO 3) have garnered significant
attention in the areas of smart windows, dynamic display, low-power displays, and in other …

Indium-zinc-tin-oxide thin-film-transistor reliability enhancement using fluoridation with CF4 reactive sputtering

CL Fan, TC Hsin, XW Yu, ZC Lin - Materials Science in Semiconductor …, 2024 - Elsevier
We propose a new fluorine doping scheme to achieve a notable improvement in IZTO thin-
film-transistor reliability using the fluorine-doped IZTO channel with the stacked IZTO: F/IZTO …

Influence of oxygen flow during sputtering process on the electrical properties of Ga-doped InZnSnO thin film transistor

H Yang, J Su, X Zhang - Semiconductor Science and Technology, 2021 - iopscience.iop.org
This work presents the electrical properties of amorphous gallium-doped indium zinc tin
oxide (Ga-IZTO) thin film transistors (TFTs), as a function of O 2 flow rate (Ar/O 2), during the …