A brief overview of the rapid progress and proposed improvements in gallium nitride epitaxy and process for third-generation semiconductors with wide bandgap
AC Liu, YY Lai, HC Chen, AP Chiu, HC Kuo - Micromachines, 2023 - mdpi.com
In this paper, we will discuss the rapid progress of third-generation semiconductors with
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
[HTML][HTML] GaN power converter and high-side IC substrate issues on Si, pn junction, or SOI
The lateral GaN power semiconductor technology enables monolithic integration of
complete power converter topologies such as half-bridges, multi-phase and multi-level …
complete power converter topologies such as half-bridges, multi-phase and multi-level …
Monolithic 650-V dual-gate p-GaN bidirectional switch
G Baratella, U Chatterjee, O Syshchyk… - … on Electron Devices, 2024 - ieeexplore.ieee.org
This article is about the study and characterization of a monolithically integrated dual-gate
bidirectional switch (BDS) realized in a CMOS-compatible gallium nitride (GaN) pilot line …
bidirectional switch (BDS) realized in a CMOS-compatible gallium nitride (GaN) pilot line …
[HTML][HTML] High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures
P Shao, X Fan, S Li, S Chen, H Zhou, H Liu… - Applied Physics …, 2023 - pubs.aip.org
A two-dimensional hole gas (2DHG) induced by polarization charges at the GaN/AlGaN
hetero-interface is attracting much attention because of its potential to develop p-channel …
hetero-interface is attracting much attention because of its potential to develop p-channel …
1.2 kV enhancement-mode p-GaN gate HEMTs on 200 mm engineered substrates
This letter experimentally demonstrates 1.2 kV normally-off p-GaN gate lateral high-
electronmobility transistors (HEMTs) on 200 mm diameter engineered substrates. The …
electronmobility transistors (HEMTs) on 200 mm diameter engineered substrates. The …
Dislocation characterization in c-plane GaN epitaxial layers on 6 inch Si wafer with a fast second-harmonic generation intensity mapping technique
SE Chiang, WH Chang, YT Chen, WC Li… - …, 2023 - iopscience.iop.org
Second harmonic generation (SHG) intensity, Raman scattering stress, photoluminescence
and reflected interference pattern are used to determine the distributions of threading …
and reflected interference pattern are used to determine the distributions of threading …
Investigation into epitaxial growth optimization of a novel AlGaN/GaN HEMT structure for application in UV photodetectors
Z Liu, W Wu, X Yang, M Zhang, L Han, J Lei… - Science China …, 2024 - Springer
In this work, a novel ultraviolet (UV) photodetector (PD) based on AlGaN/u-GaN/p-GaN/u-
GaN heterojunction high electron mobility transistor (HEMT) has been developed. This …
GaN heterojunction high electron mobility transistor (HEMT) has been developed. This …
[HTML][HTML] Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates
Time-dependent conduction in epitaxial superlattice (SL) strain relief layers of GaN high
electron mobility transistors on 200 mm engineered substrates with a poly-AlN core was …
electron mobility transistors on 200 mm engineered substrates with a poly-AlN core was …
Research progress and prospect of GaN Schottky diodes
Y Shao, F Zhang, Y He, P Liu, B Sheng… - Journal of Physics D …, 2023 - iopscience.iop.org
GaN (gallium nitride), as a third-generation semiconductor (wide-band semiconductor)
material, is widely used in the fabrication of power devices with an excessive breakdown …
material, is widely used in the fabrication of power devices with an excessive breakdown …
[PDF][PDF] e-Prime—Advances in Electrical Engineering, Electronics and Energy
The lateral GaN power semiconductor technology enables monolithic integration of
complete power converter topologies such as half-bridges, multi-phase and multi-level …
complete power converter topologies such as half-bridges, multi-phase and multi-level …