Abstract Properties such as wide bandgap, higher electromechanical coupling, and low dielectric permittivity have propelled Sc x Al1− x N as an advantageous material for …
RK Chityala, A Aryal, P Osman… - Microwave and …, 2024 - Wiley Online Library
In this article, we demonstrated the minimum significant dielectric thickness of silicon dioxide (SiO2) below the diffraction limit for the confinement in the metal–insulator–metal (MIM) …