The need for decreasing semiconductor device critical dimensions at feature sizes below the
20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) …

Photoresists are fundamental materials in photolithography and are crucial for precise
patterning in microelectronic devices, MEMS, and nanostructures. This paper provides an in …

The development of photoresists (PRs) for extreme ultraviolet (EUV) lithography has
become increasingly popular in the field of semiconductor nanopatterning. However, the …

Nonchemically amplified resists (n-CARs) based on oxime sulfonate-functionalized
polystyrene (PSOS) were designed and prepared. The component ratios of the oxime …

Extending the resolution limit of next-generation lithography down to 15 nm or below
requires the resist to attain small features, high irradiation sensitivity, and low line …

Background An incredible increase in the integration of electronic chips has pushed the
semicon industries to endorse high numerical aperture (h-NA∼ 0.5), extreme-ultraviolet …

合成了2 种羧酸肟酯光敏基团修饰的苯乙烯类单体2, 2, 2-三氟-1-(4'-乙烯基-[1, 1'-联苯]-4-基) 乙-
1-酮-O-(3-甲基苯甲酰基) 肟(OXE-P) 和2, 2, 2-三氟-1-(4'-乙烯基-[1, 1'-联苯]-4-基) 乙烷-1-酮-O …

The present study investigates the mechanical properties of hybrid photoresists in the
context of their pattern-collapse behaviors. The mechanical properties such as the DMT …