M Hassaan, U Saleem, A Singh, AJ Haque, K Wang - Materials, 2024 - mdpi.com
Photoresists are fundamental materials in photolithography and are crucial for precise patterning in microelectronic devices, MEMS, and nanostructures. This paper provides an in …
T Yoon, W Park, Y Kim, H Choi, S Chung… - Journal of Materials …, 2023 - pubs.rsc.org
The development of photoresists (PRs) for extreme ultraviolet (EUV) lithography has become increasingly popular in the field of semiconductor nanopatterning. However, the …
H An, J Chen, Y Zeng, T Yu, S Wang… - ACS Applied Polymer …, 2024 - ACS Publications
Nonchemically amplified resists (n-CARs) based on oxime sulfonate-functionalized polystyrene (PSOS) were designed and prepared. The component ratios of the oxime …
MG Moinuddin, R Kumar, M Yogesh… - ACS Applied Nano …, 2020 - ACS Publications
Extending the resolution limit of next-generation lithography down to 15 nm or below requires the resist to attain small features, high irradiation sensitivity, and low line …
M Chauhan, K Palit, S Choudhary… - Journal of Micro …, 2022 - spiedigitallibrary.org
Background An incredible increase in the integration of electronic chips has pushed the semicon industries to endorse high numerical aperture (h-NA∼ 0.5), extreme-ultraviolet …
The present study investigates the mechanical properties of hybrid photoresists in the context of their pattern-collapse behaviors. The mechanical properties such as the DMT …