The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently
required for novel non-volatile memory devices with low power consumption, fast read/write …

The rapid progress of the internet of things, cloud computing, and artificial intelligence has
increased demand for high-performance computing. This demand has led to a focused …

The ferroelectric polarization stability and dielectric characteristics of ZrO 2-HfO 2
superlattice (SL) ferroelectric layer Metal-Ferroelectric-Metal (MFM) capacitor fabricated with …

CeO 2-HfO 2 solid solution thin films are fabricated on (100) InAs substrates by chemical
solution deposition (CSD) method. The effects of annealing conditions (annealing …

The increasing demand of information and communication technology has pushed
conventional computing paradigm to its limit. In addition, physical and technological factors …

Large‐area monolayer graphene is utilized as a metallic electrode for a ferroelectric single‐
crystal [Pb (Mg1/3Nb2/3) O3] m–[PbTiO3] n (PMNPT). Unlike conventional metal, whose …

The outstanding catalytic property of cerium oxide (CeO 2) strongly depends on the polaron
formation due to the oxygen vacancy (V ̈ O) defect and Ce 4+ to Ce 3+ transformation …

Abstract Lu doped Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric films were prepared on Pt/TiN/SiO
2/Si substrate by chemical solution deposition method, and an interfacial engineering …

The integration of ferroelectric HfO 2 films into two-dimensional layered-material-based
devices is expected to provide significant functionality for future electronics. In this study, Hf …

The integration of novel materials has been pivotal in advancing Si-based devices ever
since Si became the preferred material for transistors, and later, integrated circuits. New …