Focused review on print‐patterned contact electrodes for metal‐oxide thin‐film transistors

F Liu, L Gillan, J Leppäniemi… - Advanced Materials …, 2023 - Wiley Online Library
Metal‐oxide‐semiconductor‐based thin‐film transistors (TFTs) are exploited in display
backplanes and X‐ray detectors fabricated by vacuum deposition and lithographic …

Atomic Horizons Interpretation on Enhancing Electrochemical Performance of Ni‐Rich NCM Cathode via W Doping: Dual Improvements in Electronic and Ionic …

D Gao, Y Huang, H Dong, C Li, C Chang - Small, 2023 - Wiley Online Library
The rapid capacity degradation and poor rate capability hinder the application of Rich‐Ni
layered LiNixCoyMnzO2 (NCM) as cathode materials for high‐energy lithium‐ion batteries …

High-performance thin-film transistor with atomic layer deposition (ALD)-derived indium–gallium oxide channel for back-end-of-line compatible transistor applications …

JS Hur, MJ Kim, SH Yoon, H Choi… - … Applied Materials & …, 2022 - ACS Publications
In this paper, the feasibility of an indium–gallium oxide (In2 (1-x) Ga2 x O y) film through
combinatorial atomic layer deposition (ALD) as an alternative channel material for back-end …

Near-ideal top-gate controllability of InGaZnO thin-film transistors by suppressing interface defects with an ultrathin atomic layer deposited gate insulator

J Li, Y Zhang, J Wang, H Yang, X Zhou… - … Applied Materials & …, 2023 - ACS Publications
An ultrathin atomic-layer-deposited (ALD) AlO x gate insulator (GI) was implemented for self-
aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Although …

Multiple effects of hydrogen on InGaZnO thin-film transistor and the hydrogenation-resistibility enhancement

W Pan, Y Wang, Y Wang, Z Xia, FSY Yeung… - Journal of Alloys and …, 2023 - Elsevier
As the most common external dopant of amorphous oxide semiconductors (AOSs), the
hydrogen (H) exhibits great influences on the performance of AOS thin-film transistors (TFTs) …

Robustness of passivated ALD zinc tin oxide TFTs to aging and bias stress

CR Allemang, TH Cho, NP Dasgupta… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Thin-film electronics fabricated with amorphous oxide semiconductors (AOS) are being
studied for beyond-display technologies because of their superior electron transport. To …

High performance of ZnSnO thin-film transistors engineered by oxygen defect modulation

W Pan, X Zhou, Y Li, W Dong, L Lu, S Zhang - Materials Science in …, 2022 - Elsevier
Thin film transistor (TFT) with low cost and high performance is significantly important for
practical applications. In this work, In-free ZnSnO (ZTO) TFT with high performance is …

Performance improvement of self-aligned coplanar amorphous indium–gallium–zinc oxide thin-film transistors by boron implantation

SH Kang, IS Lee, K Kwak, KT Min… - ACS Applied …, 2022 - ACS Publications
The electrical properties and device stability of a self-aligned (SA) coplanar amorphous
indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) were investigated by …

Ultra-thin top-gate insulator of atomic-layer-deposited HfOx for amorphous InGaZnO thin-film transistors

Y Guan, Y Zhang, J Li, J Li, Y Zhang, Z Wang… - Applied Surface …, 2023 - Elsevier
In recent years, high-k gate dielectrics have attracted increasing attention in amorphous
oxide semiconductor (AOS) thin-film transistors (TFTs), due to the urge for stronger gate …

Achieving ultralow contact resistance and reducing residual hydrogen by surface doping

D Ahmad, J Xu, J Luo, N Zhou, J Gao, Y Lu - Applied Surface Science, 2024 - Elsevier
Indium gallium zinc oxide (IGZO)-based materials and devices hold a significant position in
integrated circuit manufacturing industries, yet challenges persist in controlling residual …