Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …

Charge trapping plays an important role for the reliability of electronic devices and manifests
itself in various phenomena like bias temperature instability (BTI), random telegraph noise …

We present a microscopic breakdown (BD) model in which chemical bonds are weakened
by carrier injection and trapping into pre-existing structural defects (precursors) and by the …

The choice of the ideal material employed in selector devices is a tough task both from the
theoretical and experimental side, especially due to the lack of a synergistic approach …

Leakage currents through dielectrics in modern logic, memory, and power devices, and back-
end interlevel layers can severely increase the time-zero power dissipation and shorten the …

Using the framework developed in the first part of this work, we demonstrate the capabilities
of the extended two-state nonradiative multi-phonon (NMP) model by reproducing leakage …

In this study, molybdenum tungsten/amorphous InGaZnO (a-IGZO)/TiO2/n-type Si-based
resistive random access memory (ReRAM) is manufactured. After deposition of the a-IGZO …

We use conduction atomic force microscopy (CAFM) to examine the soft breakdown of
monocrystalline hexagonal boron nitride (h-BN) and relate the observations to the defect …

Discovery of ferroelectricity (FE) in binary oxides enables the advent of FE memories and a
plethora of novel CMOS compatible building blocks spanning from the logic domain to high …

Understanding the degradation dynamics and the breakdown sequence of a bilayer high-k
(HK) gate dielectric stack is crucial for the improvement of device reliability. We present a …