AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

The major issues confronting the performance of deep-UV (DUV) laser diodes (LDs) are
reviewed along with the different approaches aimed at performance improvement. The …

Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from
AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates …

Optically pumped lasing from AlGaN/AlN multiple quantum wells grown on single-crystalline
AlN substrates with lasing thresholds as low as 6 kW/cm 2 is demonstrated via the reduction …

We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated
emission from photo-pumped AlGaN multiple-quantum-well lasers grown …

The influence of the polarization field on the emission properties of the AlGaN-based
quantum structures grown on AlN substrates was investigated as a function of well width …

We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-
plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate …

The hexagonal boron nitride (hBN) and BAlN films were prepared by RF-sputtering, which
were used as the low and high refractive index layers. A series of hBN/BAlN distributed …

Over the past decades, the aluminum gallium nitride (AlGaN) alloy system has received
wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its …

We propose AlGaN-based GRaded-INdex Separate Confinement Heterostructure as a
candidate for electrically pumped deep-UV semiconductor laser. Strong compositional …