Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
Application of gallium nitride high-electron-mobility transistors (GaN HEMTs) to millimeter-
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
High RF performance E-mode GaN-on-Si HEMTs with Pout of 5.32 W/mm using high-quality ultrathin buffer
J Du, B Hou, L Yang, Y Zhang, Q Zhu… - IEEE Electron …, 2025 - ieeexplore.ieee.org
In this paper, we report a high-performance enhancement-mode GaN HEMT fabricated on
high-quality ultrathin buffer, which achieved by a two-step-graded (TSG) transition structure …
high-quality ultrathin buffer, which achieved by a two-step-graded (TSG) transition structure …
Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs
D Xiao, DMMP Schreurs, R ElKashlan… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
Gate current is known to limit device performance, yet a detailed analysis of its impact on RF
power performance has not been extensively documented. This article examines the …
power performance has not been extensively documented. This article examines the …
High Performance AlN/GaN HEMT for Millimeter-Wave Low-Voltage Applications Fabricated Using Low-Damage Etching
H Li, M Mi, C Gong, P Wang, Y Zhou… - IEEE Electron …, 2024 - ieeexplore.ieee.org
In this letter, an AlN/GaN high electron mobility transistor (HEMT), demonstrating high
performance at 30 GHz and low operating voltages is proposed. Benefitting from the novel …
performance at 30 GHz and low operating voltages is proposed. Benefitting from the novel …
Reverse Gate Leakage Induced Buffer Charging and Threshold Voltage Shift of GaN HEMTs
We discuss a physical mechanism in the AlGaN/GaN high electron mobility transistors
(HEMTs) that partial electrons from reverse gate leakage () inject into the HEMT buffer and …
(HEMTs) that partial electrons from reverse gate leakage () inject into the HEMT buffer and …
AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates
Fabrication of low-RF loss GaN-on-Si HEMT stacks is critical to enable competitive front-end-
modules for 5G and 6G applications. The main contribution to RF losses is the interface …
modules for 5G and 6G applications. The main contribution to RF losses is the interface …
Nonlinear Modeling of CMOS Compatible SiN/AlN/GaN MIS-HEMT on 200mm Si Operating at mm-Wave Frequencies
Y Fouzi, E Morvan, Y Gobil, F Morisot… - 2024 19th European …, 2024 - ieeexplore.ieee.org
The performance of a CMOS-compatible SiN/AlN/GaN MIS-HEMT on 200mm Silicon
substrate with high power capabilities in Ka band is evaluated. The devices show an F t/F …
substrate with high power capabilities in Ka band is evaluated. The devices show an F t/F …
InAlN/GaN-on-Si HEMTs with an InGaN Back Barrier for mm-Wave Applications
We present InAIN/GaN-on-Si HEMTs with a 26 nm intrinsic GaN (iGaN) channel and a
carbon-doped (cGaN) buffer separated by a thin 8~nmIn_0.12 GaN back barrier and a …
carbon-doped (cGaN) buffer separated by a thin 8~nmIn_0.12 GaN back barrier and a …
Optimization of GaN on Silicon technology for RF power applications
E Carneiro - 2024 - hal.science
The advent of 5G and beyond telecommunications demands robust equipment capable of
delivering superior output power density at high frequencies, particularly within the …
delivering superior output power density at high frequencies, particularly within the …
RF Technology Roadmap for 5G and 6G RF Front-end Systems
Y Morandini - Technologies Enabling Future Mobile Connectivity & …, 2024 - taylorfrancis.com
The evolution of 5G and 6G wireless systems adds considerable challenges to new RF front-
end designs and their implementation. For 5G FR1 (450 MHz to 6 GHz) and FR2 (20–60 …
end designs and their implementation. For 5G FR1 (450 MHz to 6 GHz) and FR2 (20–60 …