[HTML][HTML] Al-doped SnO2 thin films: impacts of high temperature annealing on the structural, optical and electrical properties
Abstract Undoped Tin Oxide (SnO 2) and 4, 8, 14 at.% Aluminum (Al) doped SnO 2 thin films
(hereafter Sn 1-x O 2: Al x) were fabricated by thermal vacuum evaporation and stacked …
(hereafter Sn 1-x O 2: Al x) were fabricated by thermal vacuum evaporation and stacked …
Photovoltaic parameters and computational spectroscopic investigation of third order nonlinear optical of CuPc/Si organic diode
The organic diode based on copper phthalocynanine (C u P c) molecule is manufactured by
spin coating route. The electrical characterization of A u/C u P c/S i/A l under dark and light is …
spin coating route. The electrical characterization of A u/C u P c/S i/A l under dark and light is …
Structural, optical, nonlinear optical, HUMO-LUMO properties and electrical characterization of Poly (3-hexylthiophene)(P3HT)
This research deals with structural, optical, dielectric, nonlinear optical and electrical
properties of P3HT organic oligomer by computational and experimental procedures. Based …
properties of P3HT organic oligomer by computational and experimental procedures. Based …
Fabrication, illumination dependent electrical and photovoltaic properties of Au/BOD-Pyr/n-Si/In schottky diode
Difluoro-4-bora-3a, 4a-diaza-s-indacene (BODIPY)-based BOD-Pyr compound was
synthesized according to the literature and HOMO and LUMO energies of the BOD-Pyr were …
synthesized according to the literature and HOMO and LUMO energies of the BOD-Pyr were …
Dielectric, resistivity, and current–voltage characteristics of magnesium-doped tin oxide for optoelectronics application
KK Singha, SK Srivastava - Journal of Materials Science: Materials in …, 2024 - Springer
For years, scientists have been working to identify new oxide materials with appropriate
properties that could be used in the development of next–generation optoelectronic and …
properties that could be used in the development of next–generation optoelectronic and …
Investigation of Schottky emission and space charge limited current (SCLC) in Au/SnO2/n-Si Schottky diode with gamma-ray irradiation
The current–voltage characteristics of Au/SnO2/n-Si Schottky diode before and after
irradiation by 60Co γ-ray with an irradiation dose of 10 kGy have been investigated. The …
irradiation by 60Co γ-ray with an irradiation dose of 10 kGy have been investigated. The …
Electrical Properties and Conduction Mechanism of Au/C20H12/n-Si Structure at High Temperatures Utilizing Impedance Measurements
S Bengi - Journal of Electronic Materials, 2023 - Springer
The temperature-dependent changes in the capacitance–voltage (C–V) and conductivity–
voltage (G/w–V) curves of the Au/C20H12/n-Si structure were investigated in the high …
voltage (G/w–V) curves of the Au/C20H12/n-Si structure were investigated in the high …
Improving light-sensing behavior of Cu/n-Si photodiode with Human Serum Albumin: Microelectronic and dielectric characterization
This research was mainly focused on the investigation of the effect of Human Serum
Albumin (HSA) on the electrical features of Cu/n-Si device. To do this, HSA layer was grown …
Albumin (HSA) on the electrical features of Cu/n-Si device. To do this, HSA layer was grown …
Enhanced visible-light induced photocatalytic activity in core-shell structured graphene/titanium dioxide nanofiber mats
Semiconductor photocatalysts suffer from low photocatalytic quantum efficiency, diminished
solar energy utilization, and inadequate photostability, thereby impeding their widespread …
solar energy utilization, and inadequate photostability, thereby impeding their widespread …
Illumination dependent electrical and photovoltaic properties of Au/n-Type Si schottky diode with anthracene-based NAMA interlayer
A Schottky diode based on an organic semiconductor 9-[(5-nitropyridin-2-aminoethyl)
iminiomethyl]-anthracene (NAMA) was fabricated on n-Si using a spin-coating technique …
iminiomethyl]-anthracene (NAMA) was fabricated on n-Si using a spin-coating technique …