With its remarkable electro-thermal properties such as the highest known thermal
conductivity (~ 22 W cm− 1 bold dot K− 1 at RT of any material, high hole mobility (> 2000 …

Diamond is known as the ultimate semiconductor material for electric devices with excellent
properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility …

H. Kawarada, H. Tsuboi, T. Naruo, T. Yamada, D. Xu, A. Daicho, T. Saito, A. Hiraiwa; CH
surface diamond field effect transistors for high temperature (400 C) and high voltage (500 …

Temperature dependencies of the resistivity and the Hall coefficient in high-quality boron-
doped synthetic single crystal diamonds grown by the high-pressure-high-temperature …

In this chapter we have presented a review of the state-of-the-art of diamond crystal growth
using high pressure high temperature (HPHT) and chemical vapor deposition (CVD) …

The resistivity of boron doped polycrystalline diamond films changes with boron content in a
very complex way with many unclear factors. From the large number of parameters affecting …

Ultra-wide bandgap (UWBG) semiconductors are attracting increasing research interest for
power device applications. While promising results have been reported for various …

We developed and investigated the vertical diamond Schottky barrier diodes on large area
IIb HPHT high quality substrates. The drift CVD layers with boron content of 1016 and 2× …

Microwave plasma chemical vapor deposition (MPCVD) has been developed as a popular
method to grow artificial single crystal diamonds with high crystal quality due to its feasibility …

High temperature characteristics of bipolar-mode operation of normally-off diamond junction
field-effect transistors were investigated up to 573 K. As an important factor, the current gain …