Micro-LEDs have been hailed as the next generation display technology due to the
advantages of high brightness, high ambient contrast ratio, and high reliability. The In x Ga 1 …

Over the last decades, continuous technological advancements have been made in III‐
nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement …

In this letter, we show that low-cost physical vapor deposition of Mg followed by a thermal
diffusion annealing process increases the effective barrier height at the metal/Ga-polar GaN …

This work reports a high-performance InGaN-based red-emitting LED with a strain-release
interlayer (SRI) consisting of an InGaN stress-release layer (SRL) and an AlN dislocation …

This study demonstrated InGaN-based amber micro-light-emitting diodes (LEDs) with
varying Al contents of 2%, 5%, and 16% in barriers. The LEDs with Al GaN in barriers …

The traditional plasma etching process for defining micro-LED pixels could lead to
significant sidewall damage. Defects near sidewall regions act as non-radiative …

In this study, we have demonstrated a high-efficiency InGaN red (625 nm) light-emitting
diode (LED) with an external quantum efficiency (EQE) of 10.5% at a current density of 10 …

A SLs quaternary nitride alloy-based UV-C LED with a uniquely designed electron blocking
region is proposed in this article. At 200 A/cm 2 current density, the proposed design has …

This study investigated the temperature-dependent electroluminescent (EL) performance of
InGaN-based amber micro-light-emitting diodes (μLEDs) with a diameter of 40 μm using an …

The serious separation of electron–hole wavefunctions, which is caused by the built-in
electric field, prevents electron–hole radiative recombination in quantum wells (QWs) in high …