A broadband inductorless low-noise amplifier (LNA) design that utilizes simultaneous noise
and distortion cancellation is presented. Concurrent cancellation of the intrinsic third-order …

Low-Frequency Noise in Advanced CMOS Devices begins with an introduction to noise,
describing the fundamental noise sources and basic circuit analysis. The characterization of …

A wideband noise-cancelling low-noise amplifier (LNA) without the use of inductors is
designed for low-voltage and low-power applications. Based on the common-gate-common …

The necessity for the development of compact, portable, and reliable electronic devices of
enhanced speed and efficiency has prompted the scaling of CMOS devices to be …

A common-gate (CG) amplifier employing a transconductance nonlinearity cancellation
technique is designed for transmitter circuitry. The major contributor to the third-order …

The desire to assess the reliability of emerging scaled microelectronics technologies
through faster reliability trials and more accurate acceleration models is the precursor for …

In this study, an atomic layer etching (ALE) process for molybdenum was developed in two
steps: plasma oxidation and plasma chlorination. In the plasma oxidation step, molybdenum …

This paper presents a new high-gain structure for the distributed amplifier. Negative
capacitance cells are exploited to ameliorate the loading effects of parasitic capacitors of …

In this paper, we propose and demonstrate the first fully integrated surface acoustic wave
(SAW)-less superheterodyne receiver (RX) for 4G cellular applications. The RX operates in …

In this study, a thermal atomic layer etching process for Co comprising two steps––plasma
chlorination and chelation with hexafluoroacetylacetone (Hhfac)––was developed. The Co …