ScAlInN/GaN heterostructures grown by molecular beam epitaxy
H Ye, R Wang, L Yang, J Wang, T Wang… - Applied Physics …, 2024 - pubs.aip.org
Rare-earth (RE) elements doped III-nitride semiconductors have garnered attention for their
potential in advanced high-frequency and high-power electronic applications. We report on …
potential in advanced high-frequency and high-power electronic applications. We report on …
Rethinking Polarization in Wurtzite Semiconductors
Polarization arising from non-centrosymmetric wurtzite lattice underpins the physics and
functionality of gallium nitride (GaN)-the most produced semiconductor materials second …
functionality of gallium nitride (GaN)-the most produced semiconductor materials second …
First-Principles Study: The Optoelectronic Properties of the Wurtzite Alloy InGaN Based Solar Cells, within Modified Becke-Johnson (mBJ) Exchange Potential
A Benzina, AD Zebentout… - … Journal of Physics, 2024 - periodicals.karazin.ua
Numerical simulation based on Full Potential-Linerazed Augmented Plane Wave
calculations (FP-LAPW) is implemented in WIEN2K code to study the fundamental structural …
calculations (FP-LAPW) is implemented in WIEN2K code to study the fundamental structural …
Experimental Determination of Giant Polarization in Wurtzite III-Nitride Semiconductors
X Wang, H Ye, P Wang, R Wang, J Wang, X Xu, R Feng… - 2024 - researchsquare.com
Polarization engineering has revolutionized the photonic and electronic landscape of III-
nitride semiconductors over the past decades. However, recent revelations of giant …
nitride semiconductors over the past decades. However, recent revelations of giant …