Wide-bandgap semiconductors possess much larger energy bandgaps in comparison to
traditional semiconductors such as silicon, rendering them very promising for applications in …

The present review concerns thin film field effect transistor (TFT)-based gas sensors with
special emphasis on material synthesis, electrical characterizations and sensing properties …

Abstract In–Ga–Zn–O (IGZO) material has been researched due to its favorable electrical
characteristics for application in thin‐film transistor (TFT) applications such as low off current …

A new method of efficiency of CdTe thin film solar cells has been proposed. In view of the
characteristics of pulsed laser deposition (PLD) and combined with high power pulse bias …

In 2 O 3 is a transparent semiconductor layer due to its transparency, high mobility, and
solution processability. In this paper, we study the effect of focused oxygen plasma treatment …

Recently, back-end-of-line (BEOL) compatible indium oxide (In 2 O 3) thin-film transistors
(TFTs), grown by atomic layer deposition (ALD) with channel thickness of~ 1 nm and …

Dynamic random-access memory (DRAM) devices are essential volatile memory
components in most digital devices. With the increasing demand for further low-power and …

For high-performance and high-lifetime flexible and wearable electronic applications, a low-
temperature posttreatment method is highly expected to enhance the device performance …

Amorphous indium tin zinc oxide (a-ITZO)/Bi2Se3 nanoplatelets (NPs) were fabricated using
a two-step procedure. First, Bi2Se3 NPs were synthesized through thermal chemical vapor …

Amorphous indium-gallium-zinc-oxide (α-IGZO) thin films were prepared by high-power
impulse magnetron sputtering. The film composition and properties were investigated. The …