Discovery of graphene and its astonishing properties have given birth to a new class of
materials known as “2D materials”. Motivated by the success of graphene, alternative …

Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

Selective-area growth is a promising technique for enabling of the fabrication of the scalable
III–V nanowire networks required to test proposals for Majorana-based quantum computing …

Topological qubits based on Majorana Fermions have the potential to revolutionize the
emerging field of quantum computing by making information processing significantly more …

We report complementary metal–oxide–semiconductor (CMOS)-compatible integration of
compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively …

Ultra narrow bandgap III–V semiconductor nanomaterials provide a unique platform for
realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum …

Semiconductor nanowires composed of III–V materials have enormous potential to add new
functionality to electronics and optical applications. However, integration of these promising …

The growth kinetics of vertical III–V nanowires (NWs) were clarified long ago. The increasing
aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the …

Greater demand for III–V nanostructures with more sophisticated geometries other than
nanowires is expected because of the recent intensive investigation of nanowire networks …