Synthesis, characterization, properties and applications of two-dimensional magnetic materials

M Hossain, B Qin, B Li, X Duan - Nano Today, 2022 - Elsevier
Abstract Recently, two-dimensional (2D) magnetic materials have attracted extensive
interest thanks to their potential application as spintronic devices. Albeit bulk magnetic …

Future perspectives for spintronic devices

A Hirohata, K Takanashi - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
Spintronics is one of the emerging research fields in nanotechnology and has been growing
very rapidly. Studies of spintronics were started after the discovery of giant …

Magnetoresistive sensor development roadmap (non-recording applications)

C Zheng, K Zhu, SC De Freitas… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
Magnetoresistive (MR) sensors have been identified as promising candidates for the
development of high-performance magnetometers due to their high sensitivity, low cost, low …

Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions

W Zhu, Y Zhu, T Zhou, X Zhang, H Lin, Q Cui… - Nature …, 2023 - nature.com
Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a
nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and …

Giant tunnel magnetoresistance in magnetic tunnel junctions with a crystalline MgO (0 0 1) barrier

S Yuasa, DD Djayaprawira - Journal of Physics D: Applied …, 2007 - iopscience.iop.org
A magnetic tunnel junction (MTJ), which consists of a thin insulating layer (a tunnel barrier)
sandwiched between two ferromagnetic electrode layers, exhibits tunnel magnetoresistance …

Magnetic tunnel junctions for spintronic memories and beyond

S Ikeda, J Hayakawa, YM Lee… - … on Electron Devices, 2007 - ieeexplore.ieee.org
In this paper, recent developments in magnetic tunnel junctions (MTJs) are reported with
their potential impacts on integrated circuits. MTJs consist of two metal ferromagnets …

Bias-driven high-power microwave emission from MgO-based tunnel magnetoresistance devices

AM Deac, A Fukushima, H Kubota, H Maehara… - Nature Physics, 2008 - nature.com
Spin-momentum transfer between a spin-polarized current and a ferromagnetic layer can
induce steady-state magnetization precession, and has recently been proposed as a …

Recent advances in two-dimensional ferromagnetism: materials synthesis, physical properties and device applications

P Huang, P Zhang, S Xu, H Wang, X Zhang, H Zhang - Nanoscale, 2020 - pubs.rsc.org
Two-dimensional (2D) ferromagnetism is critical for both scientific investigation and
technological development owing to its low-dimensionality that brings in quantization of …

The discovery, development and future of GMR: The Nobel Prize 2007

SM Thompson - Journal of Physics D: Applied Physics, 2008 - iopscience.iop.org
One hundred and one years after JJ Thomson was awarded the Nobel Prize for the
discovery of the electron, the 2007 Nobel Prize for Physics was awarded to Professors Peter …

Characterization of growth and crystallization processes in CoFeB∕ MgO∕ CoFeB magnetic tunnel junction structure by reflective high-energy electron diffraction

S Yuasa, Y Suzuki, T Katayama, K Ando - Applied Physics Letters, 2005 - pubs.aip.org
We performed reflective high-energy electron diffraction observations to investigate the
growth and crystallization processes of Co 60 Fe 20 B 20∕ MgO∕ Co 60 Fe 20 B 20 …