Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation
devices as they can serve as a synaptic device for neuromorphic implementation and a one …

Non-volatile memory (NVM) devices, such as Flash, phase change RAM, spin transfer
torque RAM, and resistive RAM, offer several advantages and challenges when compared …

The increasing demand for memory in hyperscale applications has led to memory becoming
a large portion of the overall datacenter spend. The emergence of coherent interfaces like …

Growing main memory capacity has fueled the development of in-memory big data
management and processing. By eliminating disk I/O bottleneck, it is now possible to support …

Modern computer systems have been built around the assumption that persistent storage is
accessed via a slow, block-based interface. However, new byte-addressable, persistent …

Software-controlled heterogeneous memory systems have the potential to increase the
performance and cost efficiency of computing systems. However they can only deliver on …

Phase-Change Memory (PCM) technology has received substantial attention recently.
Because PCM is byte-addressable and exhibits access times in the nanosecond range, it …

With the arrival of tiered memory systems comprising various types of memory, such as
DRAM and SCM, the operating system support for memory management is becoming …

Next-generation non-volatile memories (NVMs) promise DRAM-like performance,
persistence, and high density. They can attach directly to processors to form non-volatile …

There has been a surge of interest in Non-Volatile Memory (NVM) in recent years. With
many advantages, such as density and power consumption, NVM is carving out a place in …