In this study, the recent advances and trends in multiple system and heterogeneous
integration with through-silicon via (TSV) interposers will be investigated. Emphasis is …

3D integration consists of 3D integrated circuit (IC) packaging, 3D Si integration, and 3D IC
integration. They are different and in general the through-silicon via (TSV) separates 3D IC …

Through-Silicon-Via (TSV) is the enabling technology for the fine-grained 3D integration of
multiple dies into a single stack. These TSVs occupy non-negligible silicon area because of …

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In this investigation, the chip-last, redistribution-layer (RDL)–first, fan-out panel-level
packaging (FOPLP) for heterogeneous integration is studied. Emphasis is placed on the …

For the first time, a sequentially processed sub-50nm monolithic 3D IC with integrated
logic/NVM circuits and SRAM is demonstrated using multiple layers of ultrathin-body (UTB) …

Through-silicon vias (TSVs) in 3-D integrated circuits (ICs), which are used for connecting
different active layers, introduce an important source of coupling noise arising from electrical …

Through-silicon-via (TSV) approach has been widely investigated recently for three-
dimensional (3D) electronic packaging integration. TSV wafer warpage is one of the most …

A novel multifocus image fusion algorithm based on contourlet transform and region
statistics was proposed. For good properties of multiscale, localization, directionality and …

The thermoelastic strains are induced by through silicon vias due to the difference of thermal
expansion coefficients between the copper (~ 18 ppm/° C) and silicon (~ 2.8 ppm/° C) when …