There has been substantial international research effort in the development of SiC
electronics over the last ten years. With promising applications in power electronics, hostile …

The present state of SiC power Schottky and PiN diodes are presented in this paper. The
design, fabrication, and characterization of a 130 A Schottky diode, 4.9 kV Schottky diode …

After many years of research and development, silicon carbide has emerged as one of the
most important wide band gap semiconductors. The first commercial SiC devices? power …

A review of current issues in SiC device processing technology is followed by a critical
assessment of the current state-of-the-art and future potential for SiC power devices …

For Silicon Carbide (SiC) high-voltage rectifier diodes, contradictions appear when the most
important parameter of the diodes, the minority carrier lifetime, is measured by different …

We have fabricated and investigated high-voltage GaN vertical Schottky-barrier rectifiers
grown by metalorganic chemical vapor deposition. A mesageometry Schottky-barrier rectifier …

Abstract The GaN Schottky diodes capable of operating in the 300–700-V range with low
turn-on voltage (0.7 V) and forward conduction currents of at least 10 A at 1.4 V (with …

Experimental data on electron and hole mobility in three silicon carbide polytypes, 4 H-SiC,
6 H-SiC, and 3 C-SiC, are analyzed. A semiempirical model is proposed for describing the …

The forward I–V characteristics of 4H-SiC pin diodes are studied in a wide range of currents
and temperatures by means of an analytical model that allows us to highlight the minority …

In this paper, ways to create silicon carbide p+-emitters with high injection coefficients are
considered. Raising the emitter doping level, eliminating the deteriorated layer, and making …