Semiconductor systems and methods may include a semiconductor processing chamber
having a gas box defining an access to the semiconductor processing chamber. The …

Semiconductor systems and methods may include a semi conductor processing chamber
having a gas box defining an access to the semiconductor processing chamber. The cham …

3, 969077 4006047 4, 190488 4.209. 357 4,214,946 4, 232060 4.234. 628 4,265.943
4,340,462 4,341,592 4,361,418 4,364,803 4,368.223 4, 374698 4,381,441 4,397,812 …

Described processing chambers may include a chamber housing at least partially defining
an interior region of the semiconductor processing chamber. The chambers may include a …

An exemplary system may include a chamber configured to contain a semiconductor
substrate in a processing region of the chamber. The system may include a first remote …

A multi-component coating composition for a surface of a semiconductor process chamber
component comprising at least one first film layer of a yttrium oxide or a yttrium fluoride …

Described herein are articles, systems and methods where a plasma resistant coating is
deposited onto a surface of a chamber component using an atomic layer deposition (ALD) …

An article such as a susceptor includes a body of a thermally conductive material coated by
a first protective layer and a second protective layer over a surface of the body. The first …

US10961617B2 - Articles coated with fluoro-annealed films - Google Patents
US10961617B2 - Articles coated with fluoro-annealed films - Google Patents Articles …

Methods of selectively etching tungsten from the surface of a patterned substrate are
described. The etch electrically separates vertically arranged tungsten slabs from one …