As the technology scales down, various soft errors in SRAM memories occurs due to which
the single cell and multiple cell upsets are formed. Error correction codes such as the first …

The memories and registers are the critical components in a processor which are prone to
errors like single bit upset or multiple bit upsets due to radiation effects. The error detection …

Reliable computer systems employ error control codes (ECCs) to protect information from
errors. For example, memories are frequently protected using single error correction-double …

Multiple cell upsets (MCUs) caused by radiation is an important issue related to the reliability
of embedded static random access memories (SRAMs). Multiple random and adjacent error …

The internet of things (IoT) based wireless sensor networks (WSNs) have been employed in
many applications in industrial and medical fields. Smaller codeword length and low area …

The error detecting and correcting codes are used in critical applications like in intensive
care units, defense applications, and require highly reliable data. This brief focuses on …

Reliability of embedded memories is dependent on at-speed rated correction capability of
error detection and correction codes. Many critical applications like medical databases …

Mostly random and adjacent error correcting codes are used to protect stored data in
SRAMs against multiple bit upsets (MBUs). These MBUs caused by radiation are an …

The detection and correction of errors during memory read operation performed per clock
cycle play a significant role in at-speed testing of embedded memories. The majority of key …

The object of this study is the software and architectural solutions for specialized systems
that monitor the state of potentially hazardous facilities (hereinafter, PHF). The problem …