Low-Dimensional Silicon Nanowire (SiNW) Conductance Model

An analytical surface potential based threshold voltage model of triple material surrounding gate Schottky barrier MOSFET

S Mondal, D Naru, A Sarkar… - Journal of Computational …, 2015 - ingentaconnect.com
Triple material surrounding gate Schottky-barrier (TMSRGSB) MOSFET is an innovative
device in order to suppress short-channel effects (SCEs). In this paper, we present a new …
被引用次数：4 相关文章 所有 2 个版本

A junctionless MOSFET with a triple-material gate

SS Saib, A Srivastava - Journal of Computational and …, 2015 - ingentaconnect.com
A Triple-material Gate (TMG) structure is introduced into the Junctionless (JL) MOSFET to
form TMGJL MOSFET. Using 2-D device simulation, the RF/analog performance of TMGJL …
被引用次数：2 相关文章 所有 2 个版本

InGaAs and HfO2 based junctionless vertical double gate metal oxide semiconductor field effect transistor: Performance analysis

P Dobwal, B Santhibhushan… - … of Computational and …, 2015 - ingentaconnect.com
In the present paper, a junctionless vertical double gate Metal Oxide Semiconductor Field
Effect Transistor (JLVDGM) with InGaAs substrate and HfO2 dielectric has been proposed, to …
被引用次数：2 相关文章 所有 2 个版本

An analytical model for quantum confinement in silicon nanowires

A Chakraborty, A Sarkar - Quantum Matter, 2016 - ingentaconnect.com
In this paper, an analytical model of the cylindrical confinement for silicon nanowire is
presented. The effects of quantum mechanical effects (QME) are discussed and a quantum …
被引用次数：1 相关文章