Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Quantum conductance in memristive devices: fundamentals, developments, and applications
Quantum effects in novel functional materials and new device concepts represent a potential
breakthrough for the development of new information processing technologies based on …
breakthrough for the development of new information processing technologies based on …
Emerging memories: resistive switching mechanisms and current status
The resistance switching behaviour of several materials has recently attracted considerable
attention for its application in non-volatile memory (NVM) devices, popularly described as …
attention for its application in non-volatile memory (NVM) devices, popularly described as …
Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges.
R Waser, R Dittmann, G Staikov… - … Materials (Deerfield Beach …, 2009 - europepmc.org
This review article introduces resistive switching processes that are being considered for
nanoelectronic nonvolatile memories. The three main classes are based on an …
nanoelectronic nonvolatile memories. The three main classes are based on an …
Nanoionics-based resistive switching memories
Many metal–insulator–metal systems show electrically induced resistive switching effects
and have therefore been proposed as the basis for future non-volatile memories. They …
and have therefore been proposed as the basis for future non-volatile memories. They …
The mechanism of electroforming of metal oxide memristive switches
Metal and semiconductor oxides are ubiquitous electronic materials. Normally insulating,
oxides can change behavior under high electric fields—through'electroforming'or'breakdown …
oxides can change behavior under high electric fields—through'electroforming'or'breakdown …
Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale
Using a set of scanning probe microscopy techniques, we demonstrate the reproducible
tunneling electroresistance effect on nanometer-thick epitaxial BaTiO3 single-crystalline thin …
tunneling electroresistance effect on nanometer-thick epitaxial BaTiO3 single-crystalline thin …
Ferroelectric tunnel memristor
Strong interest in resistive switching phenomena is driven by a possibility to develop
electronic devices with novel functional properties not available in conventional systems …
electronic devices with novel functional properties not available in conventional systems …
Overview of resistive random access memory (RRAM): Materials, filament mechanisms, performance optimization, and prospects
H Wang, X Yan - physica status solidi (RRL)–Rapid Research …, 2019 - Wiley Online Library
Because conventional nonvolatile memory is limited by process technology and physical
size, resistive random access memory (RRAM) gradually enters the field of view due to its …
size, resistive random access memory (RRAM) gradually enters the field of view due to its …