GaN-based RF power devices and amplifiers
UK Mishra, L Shen, TE Kazior… - Proceedings of the IEEE, 2008 - ieeexplore.ieee.org
The rapid development of the RF power electronics requires the introduction of wide
bandgap material due to its potential in high output power density, high operation voltage …
bandgap material due to its potential in high output power density, high operation voltage …
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate,
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …
Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and
mobility was investigated for Al 0.32 Ga 0.68 N/GaN and GaN/Al 0.32 Ga 0.68 N/GaN …
mobility was investigated for Al 0.32 Ga 0.68 N/GaN and GaN/Al 0.32 Ga 0.68 N/GaN …
Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with and silicon oxynitride
S Arulkumaran, T Egawa, H Ishikawa, T Jimbo… - Applied Physics …, 2004 - pubs.aip.org
Surface passivation effects were studied on AlGaN/GaN high-electron-mobility transistors
(HEMTs) using SiO 2, Si 3 N 4, and silicon oxynitride (SiON) formed by plasma enhanced …
(HEMTs) using SiO 2, Si 3 N 4, and silicon oxynitride (SiON) formed by plasma enhanced …
From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …
the semiconductor device community due to their potential to enhance device performance …
Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation
H Kim, RM Thompson, V Tilak… - IEEE Electron device …, 2003 - ieeexplore.ieee.org
The authors report on the effects of silicon nitride (SiN) surface passivation and high-electric
field stress (hot electron stress) on the degradation of undoped AlGaN-GaN power HFETs …
field stress (hot electron stress) on the degradation of undoped AlGaN-GaN power HFETs …
Comparison of GaN HEMTs on diamond and SiC substrates
JG Felbinger, MVS Chandra, Y Sun… - IEEE Electron …, 2007 - ieeexplore.ieee.org
The performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) on diamond and
SiC substrates is examined. We demonstrate GaN-on-diamond transistors with periphery …
SiC substrates is examined. We demonstrate GaN-on-diamond transistors with periphery …
AlGaN/GaN current aperture vertical electron transistors with regrown channels
I Ben-Yaacov, YK Seck, UK Mishra… - Journal of applied …, 2004 - pubs.aip.org
AlGaN/GaN current aperture vertical electron transistors with regrown aperture and source
regions have been fabricated and tested. A 2 μm thick GaN: Si drain region followed by a 0.4 …
regions have been fabricated and tested. A 2 μm thick GaN: Si drain region followed by a 0.4 …
AlGaN channel high electron mobility transistors with regrown ohmic contacts
High power electronics using wide bandgap materials are maturing rapidly, and significant
market growth is expected in a near future. Ultra wide bandgap materials, which have an …
market growth is expected in a near future. Ultra wide bandgap materials, which have an …
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation
In this paper, a high-power GaN/AlGaN/GaN high electron mobility transistor (HEMT) has
been demonstrated. A thick cap layer has been used to screen surface states and reduce …
been demonstrated. A thick cap layer has been used to screen surface states and reduce …