[HTML][HTML] A review of GaN RF devices and power amplifiers for 5G communication applications
In the emerging 5G and beyond 5G (B5G) era, the spotlight is sharply focused on the power
amplifier, a critical component with stringent specification requirements that dictates the …
amplifier, a critical component with stringent specification requirements that dictates the …
Numerical modeling of a dielectric modulated surrounding-triple-gate germanium-source MOSFET (DM-STGGS-MOSFET)-based biosensor
This paper presents for the first time an analytical model of a dielectric modulated
surrounding-triple-gate MOSFET with a germanium source-based biosensor, which shows …
surrounding-triple-gate MOSFET with a germanium source-based biosensor, which shows …
AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity
In this article, we report on the effective transconductance (gm) and gain linearity
improvement of submicrometer gate AlN-barrier-based transistors using GaN/InGaN …
improvement of submicrometer gate AlN-barrier-based transistors using GaN/InGaN …
RF linearity enhancement of GaN-on-Si HEMTs with a closely coupled double-channel structure
A closely coupled double-channel (DC) structure realized on an 8-inch GaN-on-Si wafer is
utilized to fabricate GaN high-electron-mobility-transistors (HEMTs) with enhanced RF …
utilized to fabricate GaN high-electron-mobility-transistors (HEMTs) with enhanced RF …
Dielectrically-modulated GANFET biosensor for label-free detection of DNA and avian influenza virus: proposal and modeling
This paper introduces a novel device called the Gate All Around Engineered Gallium Nitride
Field Effect Transistor (GAAE-GANFET), designed specifically for label-free biosensing …
Field Effect Transistor (GAAE-GANFET), designed specifically for label-free biosensing …
Method to Study Dynamic Depletion Behaviors in High-Voltage () p-GaN Gate HEMT on Sapphire Substrate
J Cui, Y Wu, J Yang, J Yu, T Li, X Yang… - … Devices and ICs …, 2023 - ieeexplore.ieee.org
This study presents an investigation of high-voltage enhancement-mode p-GaN gate HEMTs
on a sapphire substrate. The breakdown voltage of the devices shows a linear relationship …
on a sapphire substrate. The breakdown voltage of the devices shows a linear relationship …
Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance
In this paper, a high-performance multi-channel heterostructure based on lattice-matched
AlInN/GaN has been reported. The stacking of five heterostructures yields a high two …
AlInN/GaN has been reported. The stacking of five heterostructures yields a high two …
An analytical investigation on the charge distribution and gate control in the normally-off GaN double-channel MOS-HEMT
A systematic analytical investigation of the charge distribution and gate control of the
normally-off GaN double-channel MOS-HEMT (DC-MOS-HEMT) is presented in this paper …
normally-off GaN double-channel MOS-HEMT (DC-MOS-HEMT) is presented in this paper …
Accurate measurement of channel temperature for AlGaN/GaN HEMTs
This paper proposes a novel electrical method for the determination of channel temperature
in AlGaN/GaN high-electron mobility transistors. A test structure combining various device …
in AlGaN/GaN high-electron mobility transistors. A test structure combining various device …
ON-resistance analysis of GaN reverse-conducting HEMT with distributive built-in SBD
Recently, a GaN reverse-conducting high-electron-mobility transistor (RC-HEMT) has been
demonstrated. The RC-HEMT features built-in distributive Schottky contacts, which provide a …
demonstrated. The RC-HEMT features built-in distributive Schottky contacts, which provide a …