Abstract In recent years Ion Beam Sputtering (IBS) has revealed itself as a powerful
technique to induce surface nanopatterns with a large number of potential applications …

The calculation of the displacement damage dose (DDD) in a material is not often as
straightforward as simply combining the particle fluence and the nonionizing energy loss …

The non-ionizing energy loss (NIEL), often used to scale the damage coefficients of
irradiated electronic components, sometimes fails to make good degradation predictions …

Abstract The Norgett-Robinson-Torrens displacements per atom function is commonly used
to estimate the amount of atomic displacement produced by incident energetic particles. At …

Front-end processing mostly deals with technologies associated to junction formation in
semiconductor devices. Ion implantation and thermal anneal models are key to predict …

A molecular dynamics simulation of the long-term annealing of collision cascade remnants
in silicon is reported. The aim of the study is to determine how many point defects in freely …

At low ion energies, the approximation of independent collisions between atoms starts to
break down. The displacement damage threshold seems to be far less steep than the one …

Using molecular-dynamics simulations, we have studied the creation and evolution of
damage in crystalline and amorphous silicon following the implantation of energetic keV …

It is widely believed that high-kinetic-energy (> 1 keV) recoils in crystalline Si result in the
formation of amorphous regions, whereas low-kinetic-energy recoils lead directly to isolated …

We use classical molecular dynamics simulation techniques to study how point defects
aggregate to form extended defects in silicon. We have found that⟨ 110⟩ chains of …