High quality, epitaxial Ba (Zr 0.35 Ti 0.65) O 3 thin films were fabricated via radio frequency
magnetron sputtering technique. The leakage current density vs electric field (J–E) tests …

Lead-free piezoelectric BaZr0. 2Ti0. 8O3–Ba0. 7Ca0. 3TiO3 (BCZT) thin films were grown
on La0. 7Sr0. 3MnO3-buffered Si (001) by off-axis RF magnetron sputtering at temperatures …

Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen
vacancies (VO) is a key issue for the future development of transition-metal oxides. Progress …

The leakage behavior of ferroelectric film has an important effect on energy storage
characteristics. Understanding and controlling the leakage mechanism of ferroelectric film at …

Dielectric relaxation in ABO 3 perovskite oxides can result from many different charge carrier-
related phenomena. Despite a strong understanding of dielectric relaxations, a detailed …

Strain engineering of antiferromagnetic-paraelectric perovskite oxides with strong spin-
phonon coupling presents a route to induce a multiferroic phase with simultaneous large …

Unusual substitutional and interstitial solid solutions were observed in (1− x) Ba (Zr 0.35 Ti
0.65) O 3-xZnO thin films, where one Zn 2+ cation substituted one B-site Zr 4+/Ti 4+ site and …

This paper uses laser energy fluence as a single variable parameter to investigate the
underlying mechanisms that explain the striking physical properties in EuTiO 3–δ (ETO 3–δ) …

Post-annealing has been approved to effectively relax the out-of-plane strain in thin films.
Epitaxial EuTiO3 (ETO) thin films, with and without strain, have been fabricated on (001) …

The almost multiferroic perovskite EuTiO3 (ETO) has been prepared as films on substrates
of SrTiO3. For all prepared film thicknesses highly transparent insulating films with …