GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …

We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-
phase epitaxy on a ScAlMgO 4 (0001)(SAM) substrate without a low-temperature buffer …

Abstract N-polar $(000\bar {1}) $(− c-plane) InGaN light-emitting diodes with emission
wavelengths ranging from blue to green to red were fabricated on a c-plane sapphire …

InGaN-based LEDs on convex lens-shaped GaN microstructures are fabricated. The gently
sloping microstructures enable us to employ simple device processes similar to those for …

In this study we explored p-type δ-doping for the deposition of N-polar p-GaN films at 900 C,
for application in device structures containing high In composition active layers. Various δ …

We report on the effect of growth polarity and pulsed or δ δ-doped growth mode on impurity
incorporation in metalorganic chemical vapor deposition-grown GaN. In Ga-polar …

We report on low resistivity (1.1 Ω cm) in p-type bulk doping of N-polar GaN grown by
metalorganic chemical vapor deposition. High nitrogen chemical potential growth, facilitated …

Hillock-free thick InGaN layers were grown on N-polar GaN on sapphire by metal organic
vapor phase epitaxy using a digital growth scheme and H2 as surfactant. Introducing Mg to …