Germanium possesses higher electron and hole mobilities than silicon. There is a big leap,
however, between these basic material parameters and implementation for high …

The morphology of CoPc thin films on n-Ge substrate characterized using AFM
measurements shows fairly smooth surface with RMS roughness of 8.42 nm. Structural …

Abstract We fabricated Se Schottky contacts to n-type Ge and demonstrated their electrical
properties using temperature-dependent current–voltage measurements in the temperature …

The first observations of plastically deformed germanium made immediately clear that
dislocations introduced during a high-temperature deformation create acceptor states [1–5] …

The effect of poly (3, 4-ethylene dioxythiophene): poly (styrene sulfonate)(PEDOT: PSS)
interlayer on the Schottky barrier parameters of Pt/n-type Ge Schottky contacts was …

The electrical characteristics of a Pt/n-type Ge Schottky diode with a pyronine-B (PYR-B)
interlayer prepared by spin coating was investigated by current–voltage (I–V) and …

Abstract Effect of rapid thermal annealing (RTA) temperature on electrical, morphological
and optical properties of cobalt phthalocyanine (CoPc)/n-Ge heterostructures is investigated …

The effect of Ta-oxide interlayer on the Schottky barrier parameters of Ni/n-type Ge Schottky
barrier diode (SBD) was investigated. The introduction of the Ta-oxide interlayer in-between …

The modulation of Schottky barrier height of metal/Ge inserting an amorphous Ge layer has
been demonstrated. It is interested that the Schottky barrier height of Al/amorphous-Ge/n-Ge …

The authors have identified oxidation and desorption processes of Ge native oxide by
chemical bonding states measured by X-ray photoemission spectroscopy. Ge oxidation …